N channel MOSFET Guangdong Hottech AO3416 featuring low voltage operation and ESD protection for switching
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-40℃~+150℃
RDS(on):
22mΩ@4.5V,6.5A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
87pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.65nF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3416
Package:
SOT-23
Product Description
Product Overview
The AO3416 is a low voltage N-channel MOSFET designed for load switch and PWM applications. It features ultra low on-resistance and ESD protection, making it suitable for various electronic circuits. This surface mount device is available in a SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS* | 20 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS* | 1 | uA | VDS=20V, VGS=0V |
| Gate-body leakage current | IGSS* | 10 | uA | VDS=0V, VGS=8V |
| Gate-threshold voltage | VGS(th)* | 0.4 - 1.1 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON)* | 16 - 22 | m | VGS=4.5V, ID=6.5A |
| 18 - 26 | m | VGS=2.5V, ID=5.5A | ||
| 21 - 34 | m | VGS=1.8V, ID=5A | ||
| On-State Drain Current | ID(ON)* | 30 | A | VDS=5V, VGS=4.5V |
| Forward transconductance | gFS | 50 | S | VDS=5V, ID=6.5A |
| Gate resistance | Rg | 1.8 | K | VGS=0V, VDS=0V, f=1MHz |
| Input capacitance | Ciss | 1295 | pF | VDS=10V, VGS=0V, f=1MHz |
| 1650 | pF | |||
| Output capacitance | Coss | 160 | pF | VDS=10V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 87 | pF | VDS=10V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 280 | nS | VDS=10V, VGS=4.5V, RGEN=3, RL=1.54 |
| Turn-on rise time | tr | 328 | nS | VDS=10V, VGS=4.5V, RGEN=3, RL=1.54 |
| Turn-off delay time | td(off) | 3.78 | nS | VDS=10V, VGS=4.5V, RGEN=3, RL=1.54 |
| Turn-off fall time | tf | 2.24 | nS | VDS=10V, VGS=4.5V, RGEN=3, RL=1.54 |
| Total gate charge | Qg | 10 | nC | VDS=10V,VGS=4.5V,ID=6.5A |
| Gate-source charge | Qgs | 4.2 | nC | VDS=10V,VGS=4.5V,ID=6.5A |
| Gate-drain charge | Qg | 2.6 | nC | VDS=10V,VGS=4.5V,ID=6.5A |
| Diode forward voltage | VSD | 0.62 - 1 | V | IS=1A, VGS=0V |
| Diode forward current | IS | 2 | A | |
| Body Diode Reverse Recovery Time | trr | 31 - 41 | nS | IF=6.5A, dI/dt=100A/us |
| Body Diode Reverse Recovery Charge | Qrr | 6.8 | nC | IF=6.5A, dI/dt=100A/us |
| Continuous drain current (TA=25C) | ID | 6.5 | A | |
| Continuous drain current (TA=70C) | ID | 5.2 | A | |
| Pulsed drain current | IDM* | 30 | A | |
| Power dissipation (TA=25C) | PD | 1.4 | W | |
| Power dissipation (TA=70C) | PD | 0.9 | W | |
| Thermal resistance Junction to ambient | RJA | 125 | C/W | |
| Junction temperature | TJ | 150 | C | |
| Storage temperature | TSTG | -55 ~+150 | C | |
| Drain-source voltage | VDS | 20 | V | |
| Gate-source voltage | VGS | 8 | V |
2409302231_Guangdong-Hottech-AO3416_C5364280.pdf
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