20 Volt Drain Source Voltage N Channel MOSFET GOODWORK SI2312 Suitable for Power Conversion Circuits
Key Attributes
Model Number:
SI2312
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-
RDS(on):
40mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Output Capacitance(Coss):
105pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
865pF@10V
Gate Charge(Qg):
-
Mfr. Part #:
SI2312
Package:
SOT-23
Product Description
Product Overview
The SI2312 is an N-Channel 20-V (D-S) MOSFET designed for DC/DC converters and load switching in portable applications. It features TrenchFET Power MOSFET technology, offering excellent performance characteristics.
Product Attributes
- Brand: DEMACHEL
- Model: SI2312
- Type: N-Channel MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8.0 | V | |||
| Continuous Drain Current | ID | t=5s | 6 | A | ||
| Pulsed Drain Current | IDM | 20 | A | |||
| Continuous Source-Drain Diode Current | IS | 1.04 | A | |||
| Maximum Power Dissipation | PD | t=5s | 0.35 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | Tstg | -50 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Gate-source leakage | IGSS | VDS =0V, VGS =±8V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =20V, VGS =0V | 1.0 | µA | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.45 | 0.7 | 1.0 | V |
| Drain-source on-state resistance | RDS (on) | VGS =4.5V, ID =5.0A | 0.018 | 0.023 | Ω | |
| Drain-source on-state resistance | RDS (on) | VGS =2.5V, ID =4.7A | 0.023 | 0.028 | Ω | |
| Drain-source on-state resistance | RDS (on) | VGS =1.8V, ID =4.3A | 0.028 | 0.040 | Ω | |
| Forward tranconductance | gfS | VDS =10V, ID =5.0A | 6 | S | ||
| Input capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 865 | pF | ||
| Output capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 105 | pF | ||
| Reverse transfer capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 55 | pF | ||
| Gate resistance | Rg | f =1MHz | 0.5 | 4.8 | Ω | |
| Turn-on delay Time | td(on) | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω | 10 | ns | ||
| Rise time | tr | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω | 20 | ns | ||
| Turn-off Delay time | td(off) | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω | 32 | ns | ||
| Fall yime | tf | VGEN=5V,VDD=10V, ID =4A,RG=1Ω, RL=2.2Ω | 12 | ns | ||
| Forward diode voltage | VSD | VGS =0V,IS=4A | 0.75 | 1.2 | V |
2411081754_GOODWORK-SI2312_C42186021.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
