Transistor Guangdong Hottech BC858C plastic encapsulated model designed for switching and amplifier
Key Attributes
Model Number:
BC858C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
BC858C
Package:
SOT-23
Product Description
Product Overview
Plastic-encapsulated transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in various models including BC856, BC857, and BC858 series, offering distinct voltage and current ratings.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Material: Plastic-Encapsulate
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Model | Test Conditions | Value | Unit |
| Collector-Base Voltage | VCBO | BC856 | TA=25 | -80 | V |
| Collector-Base Voltage | VCBO | BC857 | TA=25 | -50 | V |
| Collector-Base Voltage | VCBO | BC858 | TA=25 | -30 | V |
| Collector-Emitter Voltage | VCEO | BC856 | TA=25 | -65 | V |
| Collector-Emitter Voltage | VCEO | BC857 | TA=25 | -45 | V |
| Collector-Emitter Voltage | VCEO | BC858 | TA=25 | -30 | V |
| Emitter-Base Voltage | VEBO | All | TA=25 | -5 | V |
| Collector Current - Continuous | IC | All | TA=25 | -0.1 | A |
| Collector Power Dissipation | PC | All | TA=25 | 0.2 | W |
| Junction Temperature | TJ | All | TA=25 | 150 | C |
| Storage Temperature | Tstg | All | TA=25 | -55 to +150 | C |
| Collector-base breakdown voltage | VCBO | BC856 | IC= -10A, IE=0 | -80 | V |
| Collector-base breakdown voltage | VCBO | BC857 | IC= -10A, IE=0 | -50 | V |
| Collector-base breakdown voltage | VCBO | BC858 | IC= -10A, IE=0 | -30 | V |
| Collector-emitter breakdown voltage | VCEO | BC856 | IC= -10mA, IB=0 | -65 | V |
| Collector-emitter breakdown voltage | VCEO | BC857 | IC= -10mA, IB=0 | -45 | V |
| Collector-emitter breakdown voltage | VCEO | BC858 | IC= -10mA, IB=0 | -30 | V |
| Emitter-base breakdown voltage | VEBO | All | IE= -1A, IC=0 | -5 | V |
| Collector cut-off current | ICBO | BC856 | VCB= -70 V , IE=0 | -0.1 | A |
| Collector cut-off current | ICBO | BC857 | VCB= -45 V , IE=0 | -0.1 | A |
| Collector cut-off current | ICBO | BC858 | VCB= -25 V , IE=0 | -0.1 | A |
| Collector cut-off current | ICEO | BC856 | VCE= -60 V , IB=0 | -0.1 | A |
| Collector cut-off current | ICEO | BC857 | VCE= -40 V , IB=0 | -0.1 | A |
| Collector cut-off current | ICEO | BC858 | VCE= -25 V , IB=0 | -0.1 | A |
| Emitter cut-off current | IEBO | All | VEB= -5 V , IC=0 | -0.1 | A |
| DC current gain | hFE | BC856A, 857A,858A | VCE= -5V, IC= -2mA | 125-250 | |
| DC current gain | hFE | BC856B, 857B,858B | VCE= -5V, IC= -2mA | 220-475 | |
| DC current gain | hFE | BC857C,BC858C | VCE= -5V, IC= -2mA | 420-800 | |
| Collector-emitter saturation voltage | VCE(sat) | All | IC=-100mA, IB= -5 mA | -0.5 | V |
| Base-emitter saturation voltage | VBE(sat) | All | IC= -100mA, IB= -5mA | -1.1 | V |
| Transition frequency | fT | All | VCE= -5 V, IC= -10mA, f=100MHz | 100 | MHz |
| Collector capacitance | Cob | All | VCB=-10V, f=1MHz | 4.5 | pF |
2410122025_Guangdong-Hottech-BC858C_C181149.pdf
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