Power MOSFET GOODWORK 20N03 featuring low gate charge and advanced trench technology for power switching
Key Attributes
Model Number:
20N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
29mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
61pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
490pF@15V
Pd - Power Dissipation:
5.5W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
20N03
Package:
TO-252
Product Description
Product Overview
The 20N03 N-channel MOSFETs offer excellent RDS(on) and gate charge, making them ideal for synchronous buck converter applications. These devices meet RoHS and Green Product requirements, are 100% EAS guaranteed, and have full function reliability approval. They feature advanced high cell density trench technology, super low gate charge, and are available as Green Devices.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | Min. | Typ. | Max. | |
| Absolute Maximum Ratings | Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | |||||
| Continuous Drain Current, VGS @ 10V | ID@TC=25 | 20 | A | 10s Steady State | ||||
| Continuous Drain Current, VGS @ 10V | ID@TC=100 | 8 | A | 10s Steady State | ||||
| Pulsed Drain Current | IDM | 38 | A | |||||
| Single Pulse Avalanche Energy | EAS | 28 | mJ | |||||
| Avalanche Current | IAS | 13.8 | A | |||||
| Total Power Dissipation | PD@TC=25 | 5.5 | W | |||||
| Storage Temperature Range | TSTG | -55 to 175 | ||||||
| Operating Junction Temperature Range | TJ | -55 to 175 | ||||||
| Electrical Characteristics | Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250µA | 30 | - | - |
| Zero Gate Voltage Drain Current | IDSS | - | µA | VDS=30V, VGS = 0V | - | - | 1.0 | |
| Gate to Body Leakage Current | IGSS | - | nA | VDS=0V, VGS = ±20V | - | - | ±100 | |
| Gate Threshold Voltage | VGS(th) | - | V | VDS=VGS, ID=250µA | 1.0 | 1.5 | 2.5 | |
| Static Drain-Source on-Resistance | RDS(on) | - | mΩ | VGS=10V, ID=5A | - | 15 | 20 | |
| Static Drain-Source on-Resistance | RDS(on) | - | mΩ | VGS=4.5V, ID=3A | - | 21 | 29 | |
| Input Capacitance | Ciss | - | pF | VDS=15V, VGS=0V, f=1.0MHz | - | 490 | - | |
| Dynamic Characteristics | Output Capacitance | Coss | - | pF | VDS=15V, VGS=0V, f=1.0MHz | - | 79 | - |
| Reverse Transfer Capacitance | Crss | - | pF | VDS=15V, VGS=0V, f=1.0MHz | - | 61 | - | |
| Total Gate Charge | Qg | - | nC | VDS=15V, ID=5.8A, VGS=10V | - | 10 | - | |
| Gate-Source Charge | Qgs | - | nC | VDS=15V, ID=5.8A, VGS=10V | - | 1.7 | - | |
| Gate-Drain(Miller) Charge | Qgd | - | nC | VDS=15V, ID=5.8A, VGS=10V | - | 2.5 | - | |
| Turn-on Delay Time | td(on) | - | ns | VDS=15V, ID=3A, VGS=10V, RGEN =3Ω | - | 6 | - | |
| Switching Characteristics | Turn-on Rise Time | tr | - | ns | VDS=15V, ID=3A, VGS=10V, RGEN =3Ω | - | 15 | - |
| Turn-off Delay Time | td(off) | - | ns | VDS=15V, ID=3A, VGS=10V, RGEN =3Ω | - | 17 | - | |
| Turn-off Fall Time | tf | - | ns | VDS=15V, ID=3A, VGS=10V, RGEN =3Ω | - | 17 | - | |
| Drain-Source Diode Forward Voltage | VSD | - | V | VGS=0V, IS=9A | - | - | 1.2 | |
| Body Diode Reverse Recovery Charge | Qrr | - | nC | IF=5A, dI/dt=100A/µs | - | 2 | - | |
| Drain-Source Diode Characteristics | Maximum Continuous Drain to Source Diode Forward Current | IS | - | A | - | - | 9 | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | A | - | - | 36 |
2408021742_GOODWORK-20N03_C22449616.pdf
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