N Channel Enhancement Mode MOSFET GOODWORK DMG1012UW with 20V Voltage Rating and Fast Switching Speed
Key Attributes
Model Number:
DMG1012UW
Product Custom Attributes
Drain To Source Voltage:
20V
RDS(on):
110mΩ@4.5V,600mA
Operating Temperature -:
-65℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
6pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
14.4pF
Input Capacitance(Ciss):
38.2pF@10V
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
DMG1012UW
Package:
SOT-323
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Key features include 20V, 0.8A rating, RDS(ON) = 110m@VGS = 4.5V, improved dv/dt capability, fast switching, and availability as a Green Device.
Product Attributes
- Brand: DMG (implied by product name DMG1012UW)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |||
| Reverse Voltage | VR | 75 | V | |||
| Continuous Forward Current (Single diode loaded) | IF | 175 | mA | |||
| Continuous Forward Current (Double diode loaded) | IF | 100 | mA | |||
| Repetitive Peak Forward Current | IFRM | 500 | mA | |||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | |||
| Non-repetitive Peak Forward Surge Current (at t = 1 ms) | IFSM | 1 | A | |||
| Non-repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 4 | A | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -65 | +150 | C | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | V | ||
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25 , ID=1mA | -0.01 | V/ | ||
| Drain-Source Leakage Current | IDSS | VDS=20V , VGS=0V , TJ=25 | 1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=125 | 10 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | 10 | uA | ||
| On Characteristics | ||||||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=0.6A | 110 | 180 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=0.5A | 160 | 250 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=1.8V , ID=0.2A | 300 | 500 | m | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.4 | 0.7 | 1.0 | V |
| VGS(th) Temperature Coefficient | VGS(th) | 3 | mV/ | |||
| Dynamic and switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=0.5A | 1 | nC | ||
| Gate-Source Charge | Qgs | 0.26 | ||||
| Gate-Drain Charge | Qgd | 0.2 | ||||
| Turn-On Delay Time | Td(on) | VDD=10V , VGS=4.5V , RG=10 , ID=0.5A | 5 | ns | ||
| Rise Time | Tr | 3.5 | ns | |||
| Turn-Off Delay Time | Td(off) | 14 | ns | |||
| Fall Time | Tf | 6 | ns | |||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , F=1MHz | 38.2 | pF | ||
| Output Capacitance | Coss | 14.4 | pF | |||
| Reverse Transfer Capacitance | Crss | 6 | pF | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Continuous Source Current | IS | VG=VD=0V , Force Current | 0.8 | A | ||
| Pulsed Source Current | ISM | 1.2 | A | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=0.5A , TJ=25 | 1.2 | V | ||
2505161700_GOODWORK-DMG1012UW_C48935695.pdf
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