Ultra high frequency transistor GUOXIN JIAPIN SEMICONDUCTOR FCS957 low noise NPN silicon epitaxial bipolar

Key Attributes
Model Number: FCS957
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
8GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
10V
Mfr. Part #:
FCS957
Package:
SOT-323
Product Description

Product Description

The FCS957 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain and low noise characteristics. Its ultra-small SOT-323 package makes it ideal for high-density surface mount applications, primarily used in VHF and UHF low-noise amplifiers.

Product Attributes

  • Brand: (Guo Xin Jia Pin SEMICONDUTOR)
  • Material: NPN Silicon Epitaxial Bipolar
  • Package: SOT-323

Technical Specifications

ParameterSymbolMinTypicalMaxUnitTest Condition
Collector-Base Breakdown VoltageVCBO20VIC=1.0A
Collector-Base Leakage CurrentICBO0.1AVCB=10V
Emitter-Base Breakdown VoltageVEBO1.5V
Emitter-Base Leakage CurrentIEBO0.1AVEB=1V
DC Current GainhFE90150250VCE=6V, IC=30mA
Transition FrequencyfT8GHzVCE=6V, IC=30mA, f=1GHz
Output Feedback CapacitanceCre0.65pFVCB=10V, IE=0mA, f=1MHz
Power Gain| S21e |12dBVCE=6V, IC=30mA, f=1GHz
Noise FigureNF1.5dBVCE=6V, IC=5mA, f=1GHz
Collector CurrentIC100mA
Power DissipationPC200mW
Junction TemperatureTj150
Storage TemperatureTstg-65+150

2410121235_GUOXIN-JIAPIN-SEMICONDUCTOR-FCS957_C2992557.pdf

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