650V 10A Drain Current N Channel MOSFET GOODWORK 10N65F Suitable for Switch Mode Power Supplies SMPS
Key Attributes
Model Number:
10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
2.04nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
57nC@10V
Mfr. Part #:
10N65F
Package:
ITO-220AB-3
Product Description
Product Overview
The 10N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It features a 650V breakdown voltage, 10A continuous drain current, and low on-resistance (0.87 Typ.). Key advantages include fast switching, improved dv/dt capability, and 100% avalanche tested, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Avalanche Current (Note 2) | IAR | 10 | A | |||
| Drain Current Continuous | ID | 10 | A | |||
| Drain Current Pulsed (Note 2) | IDM | 38 | A | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 700 | mJ | |||
| Avalanche Energy Repetitive (Note 2) | EAR | 15.6 | mJ | |||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation | PD | 50 | W | |||
| Junction Temperature | TJ | +150 | C | |||
| Operating Temperature | TOPR | -55 | ~ | +150 | C | |
| Storage Temperature | TSTG | -55 | ~ | +150 | C | |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 650V, VGS = 0V | 1 | A | ||
| Gate-Source Leakage Current Forward | IGSS | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| Gate-Source Leakage Current Reverse | IGSS | VGS = -30 V, VDS = 0 V | -100 | nA | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID = 250 A, Referenced to 25C | 0.7 | V/C | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 5.0A | 0.87 | 1.2 | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VDS=25V, VGS=0V, f=1.0 MHz | 1570 | 2040 | pF | |
| Output Capacitance | COSS | VDS=25V, VGS=0V, f=1.0 MHz | 166 | 215 | pF | |
| Reverse Transfer Capacitance | CRSS | VDS=25V, VGS=0V, f=1.0 MHz | 18 | 24 | pF | |
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | tD(ON) | VDD=325V, ID =10A, RG =25 (Note 1, 2) | 23 | 55 | ns | |
| Turn-On Rise Time | tR | VDD=325V, ID =10A, RG =25 (Note 1, 2) | 69 | 150 | ns | |
| Turn-Off Delay Time | tD(OFF) | VDD=325V, ID =10A, RG =25 (Note 1, 2) | 144 | 300 | ns | |
| Turn-Off Fall Time | tF | VDD=325V, ID =10A, RG =25 (Note 1, 2) | 77 | 165 | ns | |
| Total Gate Charge | QG | VDS=520V, ID=10A, VGS=10 V (Note 1, 2) | 44 | 57 | nC | |
| Gate-Source Charge | QGS | VDS=520V, ID=10A, VGS=10 V (Note 1, 2) | 6.7 | nC | ||
| Gate-Drain Charge | QGD | VDS=520V, ID=10A, VGS=10 V (Note 1, 2) | 18.5 | nC | ||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, IS =10A | 1.4 | V | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 10 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 38 | A | |||
| Reverse Recovery Time | trr | VGS = 0 V, IS = 10A, dIF / dt = 100 A/s (Note 1) | 420 | ns | ||
| Reverse Recovery Charge | QRR | VGS = 0 V, IS = 10A, dIF / dt = 100 A/s (Note 1) | 4.2 | C | ||
2408021729_GOODWORK-10N65F_C2922157.pdf
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