PNP Bipolar Transistor Guangdong Hottech 2SA1015 Suitable for High Current and Voltage Applications
Key Attributes
Model Number:
2SA1015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SA1015
Package:
SOT-23
Product Description
Product Overview
The 2SA1015 is a PNP bipolar transistor designed for high current and high voltage applications. It features excellent hFE linearity, low noise, and is a surface mount device. Its complementary counterpart is the 2SC1815. This transistor is housed in a SOT-23 package, making it suitable for various electronic circuits requiring compact components.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: 2SA1015
- Type: BIPOLAR TRANSISTOR (PNP)
- Package: SOT-23
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Origin: China (implied by Shenzhen Hottech Electronics)
- Marking: BA
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -50 | V | |
| Collector-Emitter Voltage | VCEO | -50 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -150 | mA | |
| Collector Power Dissipation | PC | 200 | mW | (TA = 25C) |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-0.1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-50V, IE=0 |
| Collector cut-off current | ICEO | -1 | uA | VCE=-50V, IB=0 |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=5V, IC=0 |
| DC current gain | hFE | 130 - 400 | VCE=6V, IC=2mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-100mAIB=-10mA |
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-100mAIB=-10mA |
| Transition frequency | fT | 80 | MHz | VCE=-10V,IC=-1mA,f=30MHz |
| hFE Rank | Range | Marking |
| L | 130-200 | |
| H | 200-400 |
| Symbol | Dimensions In Millimeters (Min. Max.) | Dimensions In Inches (Min. Max.) |
| A | 0.900 1.150 | 0.035 0.045 |
| A1 | 0.000 0.100 | 0.000 0.004 |
| A2 | 0.900 1.050 | 0.035 0.041 |
| b | 0.300 0.500 | 0.012 0.020 |
| c | 0.080 0.150 | 0.003 0.006 |
| D | 2.800 3.000 | 0.110 0.118 |
| E | 1.200 1.400 | 0.047 0.055 |
| E1 | 2.250 2.550 | 0.089 0.100 |
| e | 0.950 TYP | 0.037 TYP |
| e1 | 1.800 2.000 | 0.071 0.079 |
| L | 0.550 REF | 0.022 REF |
| L1 | 0.300 0.500 | 0.012 0.020 |
| 0 8 | 0 8 |
2410121837_Guangdong-Hottech-2SA1015_C181170.pdf
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