synchronous buck converter MOSFET GOODWORK 15N10 with advanced trench technology and low gate charge
Key Attributes
Model Number:
15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
85mΩ@10V;96mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Input Capacitance(Ciss):
765pF
Pd - Power Dissipation:
30W
Output Capacitance(Coss):
38pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
15N10
Package:
SOT-89
Product Description
Product Overview
The 15N10 is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDSON and gate charge characteristics. It is designed for synchronous buck converter applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Rating | Units | Notes |
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current, VGS @ 10V (TC=25) | ID@TC=25 | 15 | A | 1 |
| Continuous Drain Current, VGS @ 10V (TC=100) | ID@TC=100 | 8 | A | 1 |
| Continuous Drain Current, VGS @ 10V (TA=25) | ID@TA=25 | 3 | A | |
| Continuous Drain Current, VGS @ 10V (TA=70) | ID@TA=70 | 2.4 | A | |
| Pulsed Drain Current | IDM | 20 | A | 2 |
| Single Pulse Avalanche Energy | EAS | 6.1 | mJ | 3 |
| Avalanche Current | IAS | 10 | A | |
| Total Power Dissipation (TC=25) | PD@TC=25 | 30 | W | 3 |
| Total Power Dissipation (TA=25) | PD@TA=25 | 2 | W | 3 |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Thermal Resistance Junction-ambient | RJA | 70 | /W | |
| Thermal Resistance Junction-Case | RJC | 6.6 | /W | 1 |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | V(BR)DSS | 100 | V | |
| Zero Gate Voltage Drain Current (VDS=100V, VGS=0V) | IDSS | 1.0 | μA | |
| Gate to Body Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA | |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 1.0 - 2.5 | V | 1.0 - 2.5 |
| Static Drain-Source on-Resistance (VGS=10V, ID=5A) | RDS(on) | 110 | mΩ | 3, note3 |
| Static Drain-Source on-Resistance (VGS=4.5V, ID=3A) | RDS(on) | 140 | mΩ | 3, note3 |
| Input Capacitance (VDS=25V, VGS=0V, f=1.0MHz) | Ciss | 765 | pF | |
| Output Capacitance | Coss | 38 | pF | |
| Reverse Transfer Capacitance | Crss | 33 | pF | |
| Total Gate Charge (VDS=50V, ID=2A, VGS=10V) | Qg | 18 | nC | |
| Gate-Source Charge | Qgs | 2.5 | nC | |
| Gate-Drain(Miller) Charge | Qgd | 4 | nC | |
| Turn-on Delay Time (VDS=50V, ID=3A, RG=1.8Ω, VGS=10V) | td(on) | 7.5 | ns | |
| Turn-on Rise Time | tr | 6 | ns | |
| Turn-off Delay Time | td(off) | 21 | ns | |
| Turn-off Fall Time | tf | 9 | ns | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 10 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 40 | A | |
| Drain to Source Diode Forward Voltage (VGS=0V, IS=10A) | VSD | 1.2 | V | |
| Body Diode Reverse Recovery Time (IF=3A, dI/dt=100A/μs) | trr | 21 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 22 | nC |
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : TJ=25,VDD=30V,VG=10V,L=0.5mH,Rg=25,IAS=4A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
2505211809_GOODWORK-15N10_C48935724.pdf
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