power switching with GOODWORK 7N65 N Channel MOSFET offering low gate charge and 7 amp current rating
Key Attributes
Model Number:
7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.18Ω@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
21pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.4nF@25V
Pd - Power Dissipation:
48W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
7N65
Package:
TO-252
Product Description
Product Overview
The 7N65 is a N-Channel Enhancement Mode MOSFET designed for efficient power switching applications. It features a 650V drain-source voltage rating, a continuous drain current of 7A, and low on-state resistance (RDS(ON) typ = 1.18 @VGS=10V/3.5A). Key advantages include low gate charge, low Ciss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for various power supply and power management circuits.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 650V, VGS = 0V | 1 | A | ||
| Gate-Source Leakage Current (Forward) | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate-Source Leakage Current (Reverse) | VGS = -30V, VDS = 0V | -100 | nA | |||
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | ID=250A,Referenced to 25C | 0.67 | V/C | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 3.5A | 1.18 | 1.67 | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | CISS | VDS=25V, VGS=0V, f=1.0 MHz | 1400 | pF | ||
| Output Capacitance | COSS | 180 | pF | |||
| Reverse Transfer Capacitance | CRSS | 16 | 21 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | tD(ON) | VDD =325V, ID =7.4A, RG =25 (Note 1, 2) | 70 | ns | ||
| Turn-On Rise Time | tR | 170 | ns | |||
| Turn-Off Delay Time | tD(OFF) | 140 | ns | |||
| Turn-Off Fall Time | tF | 130 | ns | |||
| Total Gate Charge | QG | VDS=520V, ID = 7A, VGS=10 V (Note 1, 2) | 29 | 38 | nC | |
| Gate-Source Charge | QGS | 7 | nC | |||
| Gate-Drain Charge | QGD | 14.5 | nC | |||
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0V, IS = 7A | 1.4 | V | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 29.6 | A | |||
| Reverse Recovery Time | trr | VGS = 0V, IS = 7A, dIF / dt = 100A/s (Note 1) | 320 | ns | ||
| Reverse Recovery Charge | QRR | 2.4 | C | |||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Avalanche Current (Note 2) | IAR | 7 | A | |||
| Drain Current Continuous | ID | 7 | A | |||
| Drain Current Pulsed (Note 2) | IDM | 29.6 | A | |||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 530 | mJ | |||
| Avalanche Energy Repetitive (Note 2) | EAR | 14.2 | mJ | |||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |||
| Power Dissipation | PD | 48 | W | |||
| Junction Temperature | TJ | +150 | C | |||
| Storage Temperature | TSTG | -55 ~ +150 | C | |||
2410121550_GOODWORK-7N65_C5807883.pdf
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