load switch component GOODWORK 2N10 N channel MOSFET with excellent RDSon and fast switching capability
Key Attributes
Model Number:
2N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
RDS(on):
286mΩ@4.5V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
2.3W
Input Capacitance(Ciss):
321pF@25V
Gate Charge(Qg):
5.3nC@10V
Mfr. Part #:
2N10
Package:
SOT-23
Product Description
Product Overview
The 2N10 is a high cell density trenched N-channel MOSFET designed for excellent RDS(on) and efficiency in small power switching and load switch applications. It features a low gate charge and excellent Cdv/dt effect decline, making it suitable for fast switching applications. The 1002C meets RoHS and Green Product requirements with full function reliability approval. Advanced high cell density Trench technology ensures superior performance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | - | 1.0 | A |
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS=20V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.2 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=2A | - | 220 | 286 | m |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=1A | - | 223 | 312 | m |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | - | 321 | - | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | - | 21 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | - | 15 | - | pF |
| Total Gate Charge | Qg | VDS=30V, ID=2A, VGS=10V | - | 5.3 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V, ID=2A, VGS=10V | - | 1.3 | - | nC |
| Gate-Drain(Miller) Charge | Qgd | VDS=30V, ID=2A, VGS=10V | - | 1.7 | - | nC |
| Turn-on Delay Time | td(on) | VDS=30V, ID=1A, RGEN=3, VGS=10V | - | 14 | - | ns |
| Turn-on Rise Time | tr | VDS=30V, ID=1A, RGEN=3, VGS=10V | - | 54 | - | ns |
| Turn-off Delay Time | td(off) | VDS=30V, ID=1A, RGEN=3, VGS=10V | - | 18 | - | ns |
| Turn-off Fall Time | tf | VDS=30V, ID=1A, RGEN=3, VGS=10V | - | 11 | - | ns |
| Continuous Drain to Source Diode Forward Current | IS | - | - | - | 2.2 | A |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | - | 8.8 | A |
| Drain to Source Diode Forward Voltage | VSD | VGS=0V, IS=2.2A | - | - | 1.2 | V |
| Continuous Drain Current | ID | TA= 25 | - | - | 2 | A |
| Continuous Drain Current | ID | TA= 100 | - | - | 1.4 | A |
| Pulsed Drain Current | IDM | note1 | - | - | 8.8 | A |
| Power Dissipation | PD | TA= 25 | - | - | 2.3 | W |
| Thermal Resistance, Junction to Ambient | RJA | - | - | 54 | - | /W |
| Operating and Storage Temperature Range | TJ, TSTG | - | -55 | - | +150 |
2408021727_GOODWORK-2N10_C22470949.pdf
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