Trench DMOS Technology N Channel Power MOSFET with Superior Switching Performance GOODWORK AO3418 GK
Key Attributes
Model Number:
AO3418-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
Operating Temperature -:
-50℃~+150℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
1.3W
Mfr. Part #:
AO3418-GK
Package:
SOT-23
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse handling in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.
Product Attributes
- Brand: DEMACHEL
- Model: AO3418
- Technology: Trench DMOS
- Features: Improved dv/dt capability, Fast switching, Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage, VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient, Reference to 25 , ID=1mA | --- | 0.018 | --- | V/ |
| IDSS | Drain-Source Leakage Current, VDS=30V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current, VDS=24V , VGS=0V , TJ=125 | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current, VGS=12V , VDS=0V | --- | --- | 100 | nA |
| RDS(ON) | Static Drain-Source On-Resistance, VGS=10V , ID=3A | --- | 45 | 55 | m |
| RDS(ON) | Static Drain-Source On-Resistance, VGS=4.5V , ID=2A | --- | 48 | 65 | m |
| VGS(th) | Gate Threshold Voltage, VGS=VDS , ID =250uA | 0.5 | 1.0 | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -3.2 | --- | mV/ |
| gfs | Forward Transconductance, VDS=10V , ID=2A | --- | 2.3 | --- | S |
| Qg | Total Gate Charge, VDS=24V , VGS=10V , ID=1A | --- | 3.1 | --- | nC |
| Qgs | Gate-Source Charge | --- | 0.1 | --- | |
| Qgd | Gate-Drain Charge | --- | 1.7 | --- | |
| Td(on) | Turn-On Delay Time, VDD=24V , VGS=10V , RG=3.3 ID=1A | --- | 2.2 | --- | ns |
| Tr | Rise Time | --- | 6.9 | --- | ns |
| Td(off) | Turn-Off Delay Time | --- | 15.2 | --- | ns |
| Tf | Fall Time | --- | 4.5 | --- | ns |
| Ciss | Input Capacitance, VDS=15V , VGS=0V , F=1MHz | --- | 250 | --- | pF |
| Coss | Output Capacitance | --- | 40 | --- | pF |
| Crss | Reverse Transfer Capacitance | --- | 20 | --- | pF |
| IS | Continuous Source Current, VG=VD=0V , Force Current | --- | --- | 3.8 | A |
| ISM | Pulsed Source Current | --- | --- | 7.6 | A |
| VSD | Diode Forward Voltage, VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| PD | Power Dissipation (TA=25) | --- | --- | 1.3 | W |
| PD | Power Dissipation Derate above 25 | --- | --- | 2.22 | mW/ |
| RJA | Thermal Resistance Junction to ambient | --- | --- | 450 | /W |
| VDS | Drain-Source Voltage | --- | --- | 30 | V |
| VGS | Gate-Source Voltage | --- | --- | 12 | V |
| ID | Drain Current Continuous (TA=25) | --- | --- | 3.8 | A |
| ID | Drain Current Continuous (TA=70) | --- | --- | 3.0 | A |
| IDM | Drain Current Pulsed | --- | --- | 12 | A |
| TSTG | Storage Temperature Range | -50 | --- | 150 | |
| TJ | Operating Junction Temperature Range | -50 | --- | 150 |
2501081735_GOODWORK-AO3418-GK_C42434487.pdf
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