Fast switching silicon epitaxial diode Guangdong Hottech LL4148 with 500mW power dissipation and glass case
Key Attributes
Model Number:
LL4148
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
150mA
Mfr. Part #:
LL4148
Package:
LL-34
Product Description
Product Overview
This is a silicon epitaxial fast switching diode designed for high-speed applications. It features a power dissipation of 500mW and is housed in a compact LL-34 glass case.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Material: Silicon epitaxial
- Case Type: LL-34 glass case (SOD-80)
- Polarity: Color band denotes cathode
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| Reverse voltage | VR | 75 | V | Valid provided that electrodes are kept at ambient temperature. | ||
| Peak reverse voltage | VRM | 100 | V | |||
| Average Rectified Current | IO | 500 | mA | |||
| Non-repetitive Peak Forward Current | IFSM | 500 | mA | |||
| Power dissipation at Tamb=25oC | Ptot | 500 | mW | |||
| Junction temperature | TJ | 175 | °C | |||
| Storage temperature range | TSTG | -55 | 175 | °C | ||
| Forward voltage @ IF=10mA | VF | 1.0 | V | |||
| Leakage current at VR=20V | IR | 25 | nA | |||
| Leakage current at VR=75V | IR | 5 | µA | |||
| Leakage current at VR=20°C, TJ=150°C | IR | 50 | µA | |||
| Capacitance at VF=VR=0V | Ctot | 4 | pF | |||
| Voltage rise when switching on | Vfr | 2.5 | V | Tested with 50mA pulses tp=0.1uS, rise time 30ns, fp=5 to 100KHz | ||
| Reverse recovery time | trr | 4.0 | nS | From IF=10mA, VR=6V, RL=100Ω, at IR=1mA | ||
| Thermal resistance junction to ambient | RθJA | 350 | K/W | |||
| Rectification efficiency at 100MHz, VRF=2V | 0.45 | 3.5 |
2410010331_Guangdong-Hottech-LL4148_C181117.pdf
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