Power MOSFET GOODWORK 20N50F Featuring Low On Resistance and Enhanced dv dt Capability for Electronics
Key Attributes
Model Number:
20N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
260mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
465pF
Input Capacitance(Ciss):
3.39nF@25V
Pd - Power Dissipation:
38.5W
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
20N50F
Package:
ITO-220F
Product Description
Product Overview
The 20N50F is an N-Channel Power MOSFET designed for high-efficiency power applications. It features low on-resistance (RDS(on)), low gate charge, and improved dv/dt capability, making it suitable for demanding applications like LCD/LED/PDP TVs, lighting, and uninterruptible power supplies. This RoHS-compliant device is 100% avalanche tested for enhanced reliability.
Product Attributes
- Case: Molded plastic body
- Terminals: Solder plated, solderable per MIL-STD-750
- Polarity: As marked
- Mounting Position: Any
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| MOSFET Maximum Ratings | ||||||
| Drain to Source Voltage | VDSS | 500 | V | |||
| Gate to Source Voltage | VGSS | ±30 | V | |||
| Drain Current - Continuous (TC = 25°C) | ID | 20* | A | |||
| Drain Current - Continuous (TC = 100°C) | ID | 12.9* | A | |||
| Pulsed Drain Current | IDM | 80* (Note 1) | A | |||
| Single Pulsed Avalanche Energy | EAS | 1110 | mJ | |||
| Avalanche Current | IAR | 20 (Note 1) | A | |||
| Repetitive Avalanche Energy | EAR | 25 (Note 1) | mJ | |||
| Peak Diode Recovery dv/dt | 20 | V/ns | ||||
| Power Dissipation (TC = 25°C) | PD | 38.5 | W | |||
| Derate above 25°C | 0.3 | W/°C | ||||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | °C | ||
| Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds | TL | 300 | °C | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case, Max. | RθJC | 3.3 | °C/W | |||
| Thermal Resistance, Case to Sink, Typ. | RθCS | |||||
| Thermal Resistance, Junction to Ambient, Max. | RθJA | 62.5 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain to Source Breakdown Voltage | BVDSS | ID = 250µA, VGS = 0V, TJ = 25°C | 500 | - | - | V |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS / ΔTJ | ID = 250µA, Referenced to 25°C | - | 0.7 | - | V/°C |
| Zero Gate Voltage Drain Current | IDSS | VDS = 500V, VGS = 0V | - | - | 10 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 400V, TC = 125°C | - | - | 100 | µA |
| Gate to Body Leakage Current | IGSS | VGS = ±30V, VDS = 0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 3.0 | - | 5.0 | V |
| Static Drain to Source On Resistance | RDS(on) | VGS = 10V, ID = 10A | - | 0.22 | 0.26 | Ω |
| Forward Transconductance | gFS | VDS = 20V, ID = 10A | - | 25 | - | S |
| Input Capacitance | Ciss | VDS = 25V, VGS = 0V, f = 1MHz | - | 2550 | 3390 | pF |
| Output Capacitance | Coss | VDS = 25V, VGS = 0V, f = 1MHz | - | 350 | 465 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25V, VGS = 0V, f = 1MHz | - | 27 | 40 | pF |
| Total Gate Charge at 10V | Qg(tot) | VDS = 400V, ID = 20A, VGS = 10V (Note 4) | - | 50 | 65 | nC |
| Gate to Source Gate Charge | Qgs | VDS = 400V, ID = 20A, VGS = 10V (Note 4) | - | 14 | - | nC |
| Gate to Drain “Miller” Charge | Qgd | VDS = 400V, ID = 20A, VGS = 10V (Note 4) | - | 20 | - | nC |
| Turn-On Delay Time | td(on) | VDD = 250V, ID = 20A, RG = 25Ω (Note 4) | - | 45 | 100 | ns |
| Turn-On Rise Time | tr | VDD = 250V, ID = 20A, RG = 25Ω (Note 4) | - | 120 | 250 | ns |
| Turn-Off Delay Time | td(off) | VDD = 250V, ID = 20A, RG = 25Ω (Note 4) | - | 100 | 210 | ns |
| Turn-Off Fall Time | tf | VDD = 250V, ID = 20A, RG = 25Ω (Note 4) | - | 60 | 130 | ns |
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | 20 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | 80 | A | |
| Drain to Source Diode Forward Voltage | VSD | VGS = 0V, ISD = 20A | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS = 0V, ISD = 20A, dIF/dt = 100A/µs | - | 154 | - | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V, ISD = 20A, dIF/dt = 100A/µs | - | 0.5 | - | µC |
2408021727_GOODWORK-20N50F_C22466471.pdf
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