Durable Power MOSFET GOODWORK 60N04DF N Channel Device with Low Static Resistance and Fast Switching
Key Attributes
Model Number:
60N04DF
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
RDS(on):
7mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.35V@250uA
Reverse Transfer Capacitance (Crss@Vds):
38pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
690pF@15V
Pd - Power Dissipation:
39W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
60N04DF
Package:
PDFN-8(3x3)
Product Description
Product Overview
The 60N04DF is a high-performance N-Channel MOSFET featuring Advanced Trench MOS Technology. It offers 100% EAS Guaranteed, fast switching speed, and is a green device available for high-frequency switching and synchronous rectification applications. It is ideal for DC/DC converters.
Product Attributes
- Brand: (Not specified)
- Origin: (Not specified)
- Material: (Not specified)
- Color: Green Device Available
- Certifications: (Not specified)
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | V | ||
| RDSON | Static Drain-Source On-Resistance | VGS=10V , ID=12A | 60 | m | ||
| VGS=4.5V , ID=10A | 7 | 11 | m | |||
| ID | Continuous Drain Current | @TC=25 | 60 | A | ||
| @TC=100 | 35 | A | ||||
| Pulsed Drain Current | 130 | A | ||||
| EAS | Single Pulse Avalanche Energy | 48 | mJ | |||
| IAS | Avalanche Current | 35 | A | |||
| Thermal Data | ||||||
| PD | Total Power Dissipation | @TC=25 | 39 | W | ||
| RJA | Thermal Resistance Junction-ambient | (Steady State) | --- | 60 | /W | |
| RJC | Thermal Resistance Junction-Case | --- | 3.2 | /W | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | 60 | A | |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.35 | --- | V | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | ||
| Qg | Total Gate Charge | VDS=20V , VGS=4.5V , ID=12A | 5.8 | nC | ||
| Qgs | Gate-Source Charge | nC | ||||
| Qgd | Gate-Drain Charge | nC | ||||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 14.3 | ns | ||
| Tr | Rise Time | 5.6 | ns | |||
| Td(off) | Turn-Off Delay Time | 20 | ns | |||
| Tf | Fall Time | 11 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 690 | pF | ||
| Coss | Output Capacitance | 193 | pF | |||
| Crss | Reverse Transfer Capacitance | 38 | pF | |||
| Dimensions (In Millimeters) | ||||||
| Symbol | MAX | MIN | ||||
| A | 0.900 | 0.700 | ||||
| b | 0.350 | 0.250 | ||||
| c | 0.250 | 0.100 | ||||
| D | 3.500 | 3.050 | ||||
| D1 | 3.200 | 2.900 | ||||
| D2 | 1.950 | 1.350 | ||||
| E | 3.400 | 3.000 | ||||
| E1 | 3.300 | 2.900 | ||||
| E2 | 2.600 | 2.350 | ||||
| e | 0.65BSC | |||||
| H | 0.750 | 0.300 | ||||
| L | 0.600 | 0.300 | ||||
| L1 | 0.200 | 0.060 | ||||
| 14 | 6 | |||||
| Dimensions (In Inches) | ||||||
| Symbol | MAX | MIN | ||||
| A | 0.035 | 0.028 | ||||
| b | 0.014 | 0.010 | ||||
| c | 0.010 | 0.004 | ||||
| D | 0.138 | 0.120 | ||||
| D1 | 0.126 | 0.114 | ||||
| D2 | 0.077 | 0.053 | ||||
| E | 0.134 | 0.118 | ||||
| E1 | 0.130 | 0.114 | ||||
| E2 | 0.102 | 0.093 | ||||
| e | 0.026BSC | |||||
| H | 0.030 | 0.012 | ||||
| L | 0.024 | 0.012 | ||||
| L1 | 0.008 | 0.002 | ||||
| 14 | 6 | |||||
2504161540_GOODWORK-60N04DF_C47435899.pdf
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