NPN Bipolar Transistor Guangdong Hottech S8050 Suitable for Various Electronic Applications and Circuits
Product Overview
The S8050 is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity, high collector current capability, and is complementary to the S8550 transistor. This device is suitable for various electronic circuits requiring a general-purpose NPN transistor.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Complementary to: S8550
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Marking: J3Y
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 40 | V | |
| Collector-Emitter Voltage | VCEO | 25 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~ +150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=40V, IE=0 |
| Collector cut-off current | ICEO | 0.1 | uA | VCE=20V, IB=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 |
| DC current gain (hFE1) | hFE1 | 120-400 | VCE=1V, IC=50mA | |
| DC current gain (hFE2) | hFE2 | 50 | VCE=1V, IC=500mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC=500mAIB=50mA |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mAIB=50mA |
| Transition frequency | fT | 150 | MHz | VCE=6V, IC=20mA, f=30MHz |
2410121837_Guangdong-Hottech-S8050_C181158.pdf
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