NPN Bipolar Transistor Guangdong Hottech S8050 Suitable for Various Electronic Applications and Circuits

Key Attributes
Model Number: S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8050
Package:
SOT-23
Product Description

Product Overview

The S8050 is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity, high collector current capability, and is complementary to the S8550 transistor. This device is suitable for various electronic circuits requiring a general-purpose NPN transistor.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Complementary to: S8550
  • Case Material: Molded Plastic
  • UL Flammability Classification Rating: 94V-0
  • Marking: J3Y

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO25V
Emitter-Base VoltageVEBO5V
Collector CurrentIC500mA
Collector Power DissipationPC300mW
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~ +150C
Collector-base breakdown voltageV(BR)CBO40VIC=100uAIE=0
Collector-emitter breakdown voltageV(BR)CEO25VIC=1mAIB=0
Emitter-base breakdown voltageV(BR)EBO5VIE=100uAIC=0
Collector cut-off currentICBO0.1uAVCB=40V, IE=0
Collector cut-off currentICEO0.1uAVCE=20V, IB=0
Emitter cut-off currentIEBO0.1uAVEB=5V, IC=0
DC current gain (hFE1)hFE1120-400VCE=1V, IC=50mA
DC current gain (hFE2)hFE250VCE=1V, IC=500mA
Collector-emitter saturation voltageVCE(sat)0.6VIC=500mAIB=50mA
Base-emitter saturation voltageVBE(sat)1.2VIC=500mAIB=50mA
Transition frequencyfT150MHzVCE=6V, IC=20mA, f=30MHz

2410121837_Guangdong-Hottech-S8050_C181158.pdf

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