PNP Bipolar Transistor Guangdong Hottech BC856B with Thermal Resistance Junction to Ambient 625 C per Watt

Key Attributes
Model Number: BC856B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC856B
Package:
SOT-23
Product Description

Product Overview

The BC856 is a PNP bipolar transistor designed for automatic insertion, making it ideal for switching and AF amplifier applications. It is complementary to the BC846 and comes in a surface-mount SOT-23 package.

Product Attributes

  • Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
  • Complementary To: BC846
  • Package: SOT-23
  • Case Material: Molded Plastic
  • UL Flammability Classification Rating: 94V-0
  • Email: hkt@heketai.com

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO-80V
Collector-Emitter VoltageVCEO-65V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-100mA
Collector Power DissipationPC200mW(TA = 25C unless otherwise noted)
Thermal Resistance Junction To AmbientRJA625C/W
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO-80VIC=-10uAIE=0
Collector-emitter breakdown voltageV(BR)CEO-65VIC=-10mAIB=0
Emitter-base breakdown voltageV(BR)EBO-5VIE=-1uAIC=0
Collector cut-off currentICBO-0.1uAVCB=-70V, IE=0
Emitter cut-off currentIEBO-0.1uAVEB=-5V, IC=0
DC current gainhFE1125-800VCE=-5V, IC=-2mA
Collector-emitter saturation voltageVCE(sat)-0.5VIC=-100mAIB=-5mA
Base-emitter saturation voltageVBE(sat)-1.1VIC=-100mAIB=-5mA
Transition frequencyfT100MHzVCE=-5V,IC=-10mA,f=100MHz
Collector output capacitanceCob4.5pFVCE=-10V, IE=0, f=1MHz

2410122030_Guangdong-Hottech-BC856B_C181144.pdf

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