Surface Mount PNP Bipolar Transistor Guangdong Hottech MMBT4403 Ideal for Various Switching Circuits
Key Attributes
Model Number:
MMBT4403
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT4403
Package:
SOT-23
Product Description
Product Overview
The MMBT4403 is a PNP bipolar transistor designed for switching applications. It is a surface mount device housed in a SOT-23 package, offering a complementary function to the MMBT4401. This transistor is suitable for various electronic circuits requiring efficient switching capabilities.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Complementary to: MMBT4401
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -600 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 417 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-35V, IE=0 |
| Collector cut-off current | ICEX | -0.1 | uA | VCE=-35V, VBE=-0.4V |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-4V, IC=0 |
| DC current gain | hFE1 | 30 | VCE=-1V, IC=-0.1mA | |
| DC current gain | hFE2 | 60 | VCE=-1V, IC=-1mA | |
| DC current gain | hFE3 | 100 | VCE=-1V, IC=-10mA | |
| DC current gain | hFE4 | 100-300 | VCE=-1V, IC=-150mA | |
| DC current gain | hFE5 | 20 | VCE=-2V, IC=-500mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC=-150mAIB=-15mA |
| Collector-emitter saturation voltage | VCE(sat) | -0.75 | V | IC=-500mAIB=-50mA |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-150mAIB=-15mA |
| Base-emitter saturation voltage | VBE(sat) | -1.3 | V | IC=-500mAIB=-50mA |
| Transition frequency | fT | 200 | MHz | VCE=-10V,IC=-20mA,f=100MHz |
| Delay time | td | 15 | ns | VCC=-30V, VBE(OFF)=-0.5V, IC=-150mAIB1=-15mA |
| Rise time | tr | 20 | ns | VCC=-30V,IC=-150mA IB1=IB2=-15mA |
| Storage time | tS | 225 | ns | VCC=-30V,IC=-150mA IB1=IB2=-15mA |
| Fall time | tf | 60 | ns | VCC=-30V,IC=-150mA IB1=IB2=-15mA |
2410122030_Guangdong-Hottech-MMBT4403_C181124.pdf
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