NPN Bipolar Transistor Guangdong Hottech PXT8050 SOT89 Package Designed for Electronic Switching
Key Attributes
Model Number:
PXT8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
PXT8050
Package:
SOT-89
Product Description
Product Overview
The PXT8050 is an NPN bipolar transistor designed for surface mount applications. It is complementary to the PXT8550 and comes in a SOT-89 package. This device is suitable for various electronic circuits requiring amplification or switching functions.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Marking: Y1
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| MAXIMUM RATINGS | ||||
| Collector-Base Voltage | VCBO | 40 | V | |
| Collector-Emitter Voltage | VCEO | 25 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 1.5 | A | |
| Collector Power Dissipation | PC | 500 | mW | (TA = 25C unless otherwise noted) |
| Thermal Resistance Junction To Ambient | RJA | 250 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=0.1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=40V, IE=0 |
| Collector cut-off current | ICEO | 0.1 | uA | VCE=20V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 |
| DC current gain | hFE1 | 85 | VCE=1V, IC=100mA | |
| DC current gain | hFE2 | 40 | VCE=1V, IC=800mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=800mAIB=80mA |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=800mAIB=80mA |
| Base-emitter voltage | VBE | 1 | V | VCE=1V, IC=10mA |
| Base-emitter positive favor voltage | VBEF | 1.55 | V | IB=1A |
| Transition frequency | fT | 100 | MHz | VCE=10V,IC=50mA, f=30MHz |
| Collector output capacitance | Cob | 15 | pF | VCB=10V, IE=0, f=1MHz |
2410121837_Guangdong-Hottech-PXT8050_C181182.pdf
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