general purpose switching diode Guangdong Hottech BAS21H with low reverse current and SOD 323 package
Key Attributes
Model Number:
BAS21H
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA@200V
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21H
Package:
SOD-323
Product Description
Product Overview
The BAV21H is a fast-switching diode designed for general-purpose switching applications. It features low reverse current and is available in a surface-mount SOD-323 package, making it suitable for compact electronic designs. The diode offers reliable performance with a high non-repetitive peak reverse voltage and a moderate average rectified output current.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: BAV21H
- Package: SOD-323
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Non-Repetitive Peak Reverse Voltage | VRM | 250 | V | |
| DC Blocking Reverse Voltage | VR | 250 | V | |
| RMS Reverse Voltage | VR(RMS) | 250 | V | |
| Average Rectified Output Current | IO | 200 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | PD | 250 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 500 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Forward Voltage | VF | 1 | V | IF=100mA |
| Reverse Voltage Leakage Current | IR | 0.1 | uA | VR=200V |
| Diode Capacitance | CD | 5 | pF | VR=0V,f=1MHz |
| Reverse Recovery Time | Trr | 50 | nS | IF=IR=30mA Irr=0.1IR RL=100 |
2410122008_Guangdong-Hottech-BAS21H_C5364259.pdf
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