DC DC Converter P Channel MOSFET High Diode 2309 with Low On Resistance and Trench Technology Design
Key Attributes
Model Number:
2309
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
1 P-Channel
Output Capacitance(Coss):
32pF
Input Capacitance(Ciss):
350pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
7nC@10V
Mfr. Part #:
2309
Package:
SOT-23
Product Description
Product Overview
This P-Channel MOSFET, designed with Trench Technology, offers low on-resistance (RDS(on)) and low gate charge, making it suitable for DC/DC converters and power management applications. It provides a V(BR)DSS of -60V and a continuous drain current (ID) of -1.6A at 25.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package Type: SOT-23
- Technology: Trench Technology Power MOSFET
- Channel Type: P-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA = 25 unless otherwise noted) | ||||||
| Drain - Source Voltage | VDS | -60 | V | |||
| Gate - Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current1,5 | ID | TA = 25 | -1.6 | A | ||
| Pulsed Drain Current2 | IDM | -8.0 | A | |||
| Power Dissipation5 | PD | TA = 25 | 0.7 | W | ||
| Thermal Resistance from Junction to Ambient5 | RJA | 180 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Drain - Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -48V, VGS = 0V | -1 | µA | ||
| Gate - Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1 | -1.8 | -3.0 | V |
| Drain-source On-resistance | RDS(on) | VGS = -10V, ID = -1.5A | 120 | 160 | mΩ | |
| VGS = -4.5V, ID = -1.0A | 160 | 240 | mΩ | |||
| Forward Transconductance | gFS | VDS = -10V, ID = -1.5A | 2 | S | ||
| Input Capacitance | Ciss | VDS = -30V,VGS = 0V, f = 1MHz | 350 | pF | ||
| Output Capacitance | Coss | VDS = -30V,VGS = 0V, f = 1MHz | 32 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -30V,VGS = 0V, f = 1MHz | 26 | pF | ||
| Gate Resistance | Rg | VDS = 0V, VGS = 0V, f = 1MHz | 5 | Ω | ||
| Total Gate Charge | Qg | VDS = -30V, VGS = -10V, ID = -2.0A | 7 | nC | ||
| Gate-source Charge | Qgs | VDS = -30V, VGS = -10V, ID = -2.0A | 2.2 | nC | ||
| Gate-drain Charge | Qgd | VDS = -30V, VGS = -10V, ID = -2.0A | 3 | nC | ||
| Turn-on Delay Time | td(on) | VDD = -30V, VGS = -10V, RL = 15Ω, RG = 3Ω | 7 | ns | ||
| Turn-on Rise Time | tr | VDD = -30V, VGS = -10V, RL = 15Ω, RG = 3Ω | 6 | ns | ||
| Turn-off Delay Time | td(off) | VDD = -30V, VGS = -10V, RL = 15Ω, RG = 3Ω | 12 | ns | ||
| Turn-off Fall Time | tf | VDD = -30V, VGS = -10V, RL = 15Ω, RG = 3Ω | 7 | ns | ||
| Diode Forward Voltage | VSD | VGS = 0V, IS = -2.0A | -1.2 | V | ||
| Package Outline Dimensions (SOT-23) | ||||||
| Symbol | Min (mm) | Max (mm) | Min (in) | Max (in) | ||
| A | 0.900 | 1.150 | 0.035 | 0.045 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.050 | 0.035 | 0.041 | ||
| b | 0.300 | 0.500 | 0.012 | 0.020 | ||
| c | 0.080 | 0.150 | 0.003 | 0.006 | ||
| D | 2.800 | 3.000 | 0.110 | 0.118 | ||
| E | 1.200 | 1.400 | 0.047 | 0.055 | ||
| E1 | 2.250 | 2.550 | 0.089 | 0.100 | ||
| b | 0.300 | 0.500 | 0.012 | 0.020 | ||
| e | 0.950 TYP | 0.037 TYP | ||||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 | ||
| L | 0.550 REF | 0.022 REF | ||||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 | ||
| θ | 0° | 8° | 0° | 8° | ||
2409272232_High-Diode-2309_C22458617.pdf
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