P Channel MOSFET High Diode HD2307 Featuring TrenchFET Technology and Low Gate Charge in SOT23 Package
Key Attributes
Model Number:
HD2307
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
73mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 P-Channel
Input Capacitance(Ciss):
340pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
4.1nC@4.5V
Mfr. Part #:
HD2307
Package:
SOT-23
Product Description
Product Overview
The HD2307 is a P-Channel MOSFET from High Diode Semiconductor, designed with TrenchFET technology for excellent RDS(on) and low gate charge. This SOT-23 packaged power MOSFET is ideal for load switching in portable devices and DC/DC converters. It offers a drain-source voltage of -30V and a continuous drain current of -2.7A, with low on-state resistance.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23 Plastic-Encapsulated
- Technology: TrenchFET Power MOSFET
- Marking: S7
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |
| RDS(on)MAX | 88m / 138m | @-10V / @-4.5V | ||
| ID | -2.7A | A | ||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID =-250A |
| Gate-Source Threshold Voltage | VGS(th) | -1 ~ -3 | V | VDS =VGS, ID =-250A |
| Gate-Source Leakage | IGSS | 100 | nA | VDS =0V, VGS =20V |
| Zero Gate Voltage Drain Current | IDSS | -1 A | VDS =-30V, VGS =0V | |
| Zero Gate Voltage Drain Current (TJ=55) | IDSS | -10 A | VDS =-30V, VGS =0V, TJ=55 | |
| Drain-Source On-State Resistance | RDS(on) | 0.110 ~ 0.138 | VGS =-4.5V, ID =-2.5A | |
| Drain-Source On-State Resistance | RDS(on) | 0.073 ~ 0.088 | VGS =-10V, ID =-3.5A | |
| Forward Transconductance | gfs | 7 | S | VDS =-10V, ID =-3.5A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 340 | pF | VDS =-15V,VGS =0V,f =1MHz |
| Output Capacitance | Coss | 67 | pF | |
| Reverse Transfer Capacitance | Crss | 51 | pF | |
| Total Gate Charge | Qg | 4.1 ~ 6.2 | nC | VDS =-15V,VGS =-4.5V, ID =-2.5A |
| Gate-Source Charge | Qgs | 1.3 | nC | |
| Gate-Drain Charge | Qg | 1.8 | nC | |
| Gate Resistance | Rg | 10 | f =1MHz | |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | 40 ~ 60 | ns | VDD=-15V, RL=15, ID =-1A, VGEN=-4.5V,Rg=1 |
| Rise Time | tr | 40 ~ 60 | ns | |
| Turn-Off Delay Time | td(off) | 20 ~ 40 | ns | |
| Fall Time | tf | 17 ~ 30 | ns | |
| Body Diode Characteristics | ||||
| Body Diode Voltage | VSD | -0.8 ~ -1.2 | V | IS=-0.75A, VGS =0 |
| General Parameters | ||||
| Continuous Drain Current | ID | -2.7 | A | a,b |
| Continuous Source-Drain Current | IS | -0.91 | A | a,b |
| Power Dissipation | PD | 1.1 | W | a,b |
| Thermal Resistance Junction to Ambient | RJA | 114 | /W | (t5s) |
| Operating Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55 ~ +150 | ||
Notes:
- a. t=5s.
- b. Surface mounted on 1 1 FR4 board.
- c. Pulse Test: Pulse Width < 300s, Duty Cycle 2%.
- d. Guaranteed by design, not subject to production testing.
Package Outline Dimensions (SOT-23):
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | 1.800 - 2.000 | 0.071 - 0.079 |
| e1 | 0.950 TYP | 0.037 TYP |
| L | 0.300 - 0.500 | 0.012 - 0.020 |
| 0 - 8 | 0 - 8 |
Suggested Pad Layout (SOT-23):
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| 0.550 REF | 0.022 REF |
Reel Taping Specifications For Surface Mount Devices-SOT-23
2410121308_High-Diode-HD2307_C571347.pdf
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