Low Gate Charge P Channel MOSFET High Diode BSS84 Designed For Portable Devices And DC DC Converters
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
1.9Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.31pF
Number:
1 P-Channel
Output Capacitance(Coss):
5.48pF
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
32.9pF
Gate Charge(Qg):
620pC@10V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a P-Channel MOSFET in a SOT-23 package, designed with Trench Technology for high performance. It features low gate charge and is compliant with RoHS standards. This MOSFET is suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: HIGH DIODE SEMICONDUCTOR
- Package: SOT-23
- Technology: Trench Technology MOSFET
- Compliance: RoHS
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Drain - Source Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -50 | V |
| Gate - Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TA = 25 | -0.13 | A |
| Pulsed Drain Current | IDM | -1.2 | A | |
| Power Dissipation | PD | TA = 25 | 300 | mW |
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~ +150 | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -50V, VGS = 0V | -1 | µA |
| Gate Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -0.9 to -2.0 | V |
| Drain-source On-resistance | RDS(on) | VGS = -10V, ID = -0.1A | 1.7 | Ω |
| Drain-source On-resistance | RDS(on) | VGS = -4.5V, ID = -0.1A | 1.9 | Ω |
| Input Capacitance | Ciss | VDS = -25V, VGS = 0V, f = 1MHz | 32.9 | pF |
| Output Capacitance | Coss | VDS = -25V, VGS = 0V, f = 1MHz | 5.48 | pF |
| Reverse Transfer Capacitance | Crss | VDS = -25V, VGS = 0V, f = 1MHz | 3.31 | pF |
| Gate Resistance | Rg | VDS = 0V, VGS = 0V, f = 1MHz | 73 | Ω |
| Total Gate Charge | Qg | VDS = -10V, VGS = -10V, ID = -0.1A | 0.62 | nC |
| Gate-source Charge | Qgs | VDS = -10V, VGS = -10V, ID = -0.1A | 0.13 | nC |
| Gate-drain Charge | Qg d | VDS = -10V, VGS = -10V, ID = -0.1A | 0.11 | nC |
| Turn-on Delay Time | td(on) | VDD = -30V, VGS = -10V, RL = 110Ω, RG = 50Ω | 11 | ns |
| Turn-on Rise Time | tr | VDD = -30V, VGS = -10V, RL = 110Ω, RG = 50Ω | 6 | ns |
| Turn-off Delay Time | td(off) | VDD = -30V, VGS = -10V, RL = 110Ω, RG = 50Ω | 19 | ns |
| Turn-off Fall Time | tf | VDD = -30V, VGS = -10V, RL = 110Ω, RG = 50Ω | 8 | ns |
| Diode Forward Voltage | VSD | VGS = 0V, IS = -0.1A | -1.2 | V |
2410121326_High-Diode-BSS84_C22458615.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
