VHF UHF Bipolar Transistor NPN in SOT23 Package Guangdong Hottech MMBTH10 for Electronic Performance
Key Attributes
Model Number:
MMBTH10
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
650MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
MMBTH10
Package:
SOT-23
Product Description
MMBTH10 - BIPOLAR TRANSISTOR (NPN)
The MMBTH10 is a VHF/UHF bipolar transistor (NPN) designed for surface mount applications. Encased in a SOT-23 package, it offers reliable performance for various electronic circuits.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Package: SOT-23
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 30 | V | |
| Collector-Emitter Voltage | VCEO | 25 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 50 | mA | |
| Collector Power Dissipation | PC | 225 | mW | TA = 25C |
| Thermal Resistance Junction To Ambient | RJA | 556 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 30 | V | IC=100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 3 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=25V, IE=0 |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=2V, IC=0 |
| DC current gain | hFE | 60 | VCE=10V, IC=4mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=4mAIB=0.4mA |
| Base-emitter voltage | VBE | 0.95 | V | VCE=10V, IC=4mA |
| Transition frequency | fT | 650 | MHz | VCE=10V,IC=4mA,f=100MHz |
| Collector output capacitance | Cob | 0.7 | pF | VCE=10V, IE=0, f=1MHz |
2410122030_Guangdong-Hottech-MMBTH10_C181157.pdf
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