load switching P Channel TrenchFET Power MOSFET High Diode HD2301 for portable devices and DC DC converters
Key Attributes
Model Number:
HD2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-
RDS(on):
140mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
12nC@2.5V
Mfr. Part #:
HD2301
Package:
SOT-23
Product Description
Product Overview
The HD2301 is a P-Channel TrenchFET Power MOSFET from High Diode Semiconductor, designed for efficient load switching in portable devices and DC/DC converters. It offers excellent RDS(on) and low gate charge, contributing to its performance in power applications.
Product Attributes
- Brand: High Diode Semiconductor
- Marking: SOT-23
- Package: SOT-23 Plastic-Encapsulated MOSFET
- Technology: TrenchFET Power MOSFET
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | VGS = 0V, ID =-250A |
| Gate-Source Voltage | VGS | 8 | V | |
| Continuous Drain Current | ID | -2.3 | A | |
| Pulsed Drain Current (t=300s) | IDM | -10 | A | |
| Power Dissipation | PD | 0.35 | W | |
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~ +150 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS =-20V,VGS = 0V |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS =8V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | -0.4 ~ -1 | V | VDS =VGS, ID =-250A |
| Drain-Source On-Resistance | RDS(on) | 70 ~ 110 | m | VGS =-4.5V, ID =-3A |
| Drain-Source On-Resistance | RDS(on) | 110 ~ 140 | m | VGS =-2.5V, ID =-2A |
| Forward Transconductance | gFS | 5 | S | VDS =-5V, ID =-2A |
| Input Capacitance | Ciss | 405 | pF | VDS =-10V,VGS =0V,f =1MHz |
| Output Capacitance | Coss | 75 | pF | |
| Reverse Transfer Capacitance | Crss | 55 | pF | |
| Gate Resistance | Rg | 6 | f =1MHz | |
| Total Gate Charge | Qg | 3.3 ~ 12 | nC | VDS =-10V,VGS =-2.5V,ID=-3A |
| Gate-Source Charge | Qgs | 0.7 | nC | |
| Gate-Drain Charge | Qgd | 1.3 | nC | |
| Turn-on Delay Time | td(on) | 11 | ns | VDD=-10V,VGEN=-4.5V,ID=-1A, RL=10,RGEN=1 |
| Turn-on Rise Time | tr | 35 | ns | |
| Turn-off Delay Time | td(off) | 30 | ns | |
| Turn-off Fall Time | tf | 10 | ns | |
| Diode Forward Current | IS | -2.3 | A | TC=25 |
| Diode Pulsed Forward Current | ISM | -10 | A | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS =0V, IS=-1.3A |
2410121326_High-Diode-HD2301_C466662.pdf
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