Plastic Encapsulated Diode Guangdong Hottech BAV21W Surface Mount Fast Switching Component
Key Attributes
Model Number:
BAV21W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV21W
Package:
SOD-123
Product Description
Product Overview
These plastic-encapsulated diodes are designed for fast switching applications and feature a surface mount package ideally suited for automatic insertion. They are available in three models: BAV19W, BAV20W, and BAV21W.
Product Attributes
- Brand: HOTTECH
- Origin: GUANGDONG
- Material: Plastic-Encapsulate
Technical Specifications
| Model | Non-Repetitive Peak Reverse Voltage (VRM) | Peak Repetitive Peak Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRRM) DC Blocking | RMS Reverse Voltage (VR(RMS)) | Forward Continuous Current (IFM) | Average Rectified Output Current (IO) | Peak Forward Surge Current (IFSM) @1.0ms | Peak Forward Surge Current (IFSM) @1.0s | Repetitive Peak Forward Current (IFRM) | Power Dissipation (Pd) | Junction to Ambient Resistance (RJA) | Storage Temperature (TSTG) | Forward Voltage (VF1) @IF=100mA | Forward Voltage (VF2) @IF=200mA | Reverse Current (IR) @VR=100V (BAV19W) | Reverse Current (IR) @VR=150V (BAV20W) | Reverse Current (IR) @VR=200V (BAV21W) | Capacitance (CT) @VR=0,f=1MHz | Reverse Recovery Time (trr) @IR=IF=30mA, Irr=0.1*IR,RL=100 | Marking |
| BAV19W | 120 V | 100 V | 71 V | 400 mA | 200 mA | 2.5 A | 0.5 A | 625 mA | 500 mW | 250 /W | -65-125 | 1.0 V | 1.25 V | 0.1 A | 5 pF | 50 ns | A8 | |||
| BAV20W | 200 V | 150 V | 106 V | 400 mA | 200 mA | 2.5 A | 0.5 A | 625 mA | 500 mW | 250 /W | -65-125 | 1.0 V | 1.25 V | 0.1 A | 5 pF | 50 ns | T2 | |||
| BAV21W | 250 V | 250 V | 141 V | 400 mA | 200 mA | 2.5 A | 0.5 A | 625 mA | 500 mW | 250 /W | -65-125 | 1.0 V | 1.25 V | 0.1 A | 5 pF | 50 ns | T3 |
2410122025_Guangdong-Hottech-BAV21W_C191022.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
