HL Haolin Elec HDF860N ultra fast recovery diode engineered for fast switching and loss applications
Product Overview
The HDF860N is an ultra-fast recovery diode manufactured using advanced silicon epitaxial planar technology. It is meticulously designed with optimized process parameters and structural graphics to achieve a low forward voltage drop and extremely fast reverse recovery time. Precise epitaxial doping control, advanced planar junction termination protection, and platinum doping for minority carrier lifetime ensure superior overall performance, high durability, and reliability. This diode is widely applicable in the output rectification stage of switching power supplies, uninterruptible power supplies, and DC-DC converters. It also serves as a freewheeling diode for low-voltage conversion and chopped motor drives.
Product Attributes
- Model Series: HDF860N
Technical Specifications
| Parameter Name | Symbol | Range | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 700 | V |
| Forward Average Rectified Current | IF(AV) | 8.0 | A |
| Forward Peak Surge Current @ 8.3ms | IFSM | 90 | A |
| Operating Junction Temperature Range | TJ | -50+150 | C |
| Storage Temperature Range | Tstg | -50+150 | C |
| Chip to Case Thermal Resistance | RJC | 2.0 | C/W |
| Maximum Forward Voltage @ IF=8.0Amps, TC=25C | VF | 1.95 (Typical), 2.6 (Max) | V |
| Maximum Reverse Leakage Current @ DC Working Voltage, TC=25C | IR | 10.0 | A |
| Maximum Reverse Recovery Time @ IF=0.5 Amp, IR=1.0Amp, IREC=0.25Amp | trr | 35 | ns |
Key Features
- 35ns Ultra-fast recovery time
- Low forward voltage drop
- Low leakage current
- 150C operating junction temperature
2211160930_HL-Haolin-Elec-HDF860N_C5187568.pdf
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