Schottky Barrier Diode Guangdong Hottech SS110B for Low Voltage High Frequency Inverter Applications

Key Attributes
Model Number: SS110B
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Reverse Leakage Current (Ir):
200uA@VR
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
950mV@1A
Current - Rectified:
1A
Mfr. Part #:
SS110B
Package:
SMB
Product Description

Product Overview

The SS12B-SS120B is a Schottky Barrier Diode designed for low power loss and high efficiency. It features a small surface mount device package, high forward surge current capability, and is suitable for low voltage, high frequency inverters, free wheeling, and polarity protection applications.

Product Attributes

  • Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
  • Origin: China
  • Material: Molded Plastic (UL flammability Classification Rating: 94V-0)
  • Email: hkt@heketai.com

Technical Specifications

ParameterSymbolSS12BSS13BSS14BSS15BSS16BSS18BSS110BSS15BSS120BUnitConditions
Repetitive peak reverse VoltageVRRM203040506080100150200V
DC Reverse VoltageVR203040506080100150200V
RMS Reverse VoltageVRMS14212835425670105140V
Non-Repetitive Peak Forward Surge Current @ t = 8.3 msIFSM40A
Mean rectifying currentIF1.0A
Thermal ResistanceRJA75C/Wmounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)copper pad areas
Thermal ResistanceRJL17C/Wmounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm)copper pad areas
Junction TemperatureTJ-55 ~+125C
Storage TemperatureTSTG-55 ~+150C
Forward voltageVF0.550.700.850.95VIF=1A, TA=25C
Reverse currentIR0.30.2mAV=VR, TA=25C
Reverse currentIR105.0mAV=VR, TA=100C
Junction capacitanceCJ110pFV=4V,f=1MHZ

2507111630_Guangdong-Hottech-SS110B_C49238227.pdf

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