Switching diode Guangdong Hottech BAV99 featuring fast switching and high current handling capacity
Key Attributes
Model Number:
BAV99
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@70V
Reverse Recovery Time (trr):
6ns
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
70V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV99
Package:
SOT-23
Product Description
Product Overview
The BAV99 is a high-performance switching diode designed for general-purpose applications. It features fast switching speeds, high conductance, and is available in a surface-mount SOT-23 package, making it suitable for various electronic designs.
Product Attributes
- Brand: HOTTECH
- Origin: GUANGDONG
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Reverse Voltage | VR | 70 | V | |
| Forward Current | IF | 200 | mA | |
| Non-Repetitive Peak Forward Surge Current | IFSM | 2.0 | A | @t@=8.3ms |
| Power Dissipation | PD | 225 | mW | |
| Thermal Resistance From Junction To Ambient | RJA | 556 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Reverse breakdown voltage | V(BR) | 70 | V | IR=100uA |
| Reverse voltage leakage current | IR | 2.5 | uA | VR=70V |
| Forward voltage | VF1 | 0.715 | V | IF1=1 mA |
| Forward voltage | VF2 | 0.855 | V | IF2=10 mA |
| Forward voltage | VF3 | 1 | V | IF3=50mA |
| Forward voltage | VF4 | 1.25 | V | IF4=150 mA |
| Diode capacitance | CD | 1.5 | pF | VR=0V,f=1MHz |
| Reverse recovery time | Trr | 6 | nS | IF=IR=10mA Irr=0.1IR RL=100 |
2410122002_Guangdong-Hottech-BAV99_C2886576.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
