Compact low resistance P channel MOSFET Guangdong Hottech SI2301 for DC to DC converter applications
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
115mΩ@2.5V,1.0A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a low voltage P-channel MOSFET designed for low power DC to DC converter and load switch applications. It features low on-resistance, making it an efficient choice for power management solutions.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: China
- Case Material: Molded plastic
- Flammability Classification: UL 94V-0
- Terminal Plating: Tin plated
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| FEATURES | ||||
| RDS(ON) @ VGS=-4.5V, ID=-3.0A | RDS(ON) | ≤85 | m | |
| RDS(ON) @ VGS=-2.5V, ID=-1.0A | RDS(ON) | ≤115 | m | |
| Low on-resistance | ||||
| For low power DC to DC converter and load switch applications | ||||
| Surface mount device | ||||
| MECHANICAL DATA | ||||
| Case | SOT-23 | |||
| Weight | 0.008 | grams (approximate) | ||
| MAXIMUM RATINGS | ||||
| Drain-source voltage | VDS | -20 | V | |
| Gate-source voltage | VGS | ±8 | V | |
| Continuous drain current @ TC=25C | ID | -3.0 | A | |
| Continuous drain current @ TC=70C | ID | -2.5 | A | |
| Continuous drain current @ TA=25C (note 2,3) | ID | -2.3 | A | |
| Continuous drain current @ TA=70C (note 2,3) | ID | -1.8 | A | |
| Pulsed drain current | IDM | -10 | A | |
| Continuous source-drain diode current @ TC=25C | IS | -1.3 | A | |
| Continuous source-drain diode current @ TA=25C (note 2,3) | IS | -0.72 | A | |
| Maximum power dissipation @ TC=25C | PD | 1.6 | W | |
| Maximum power dissipation @ TC=70C | PD | 1.0 | W | |
| Maximum power dissipation @ TA=25C (note 2,3) | PD | 0.86 | W | |
| Maximum power dissipation @ TA=70C (note 2,3) | PD | 0.55 | W | |
| Operating junction and storage temperature range | TJ, Tstg | -55 ~ +150 | C | |
| Thermal resistance, junction-to-ambient @ t≤5s | RthJA | Typ.:120 Max.:145 | C/W | |
| Thermal resistance, junction-to-foot (Drain) @ Steady state | RthJF | Typ.:62 Max.:78 | C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Static Drain-source breakdown voltage | VDS | -20 | V | VDS=0V,ID=-250A |
| VDS temperature coefficient | VDS/TJ | -18 | mV/C | ID=-250A |
| VGS(th) temperature coefficient | VGS(th)/TJ | 2.2 | ||
| Gate-source threshold voltage | VGS(th) | -0.4 ~ -1 | V | VDS=VGS, ID=-250A |
| Gate-source leakage | IGSS | ±100 | nA | VDS=0V,VGS=±8V |
| Zero gate voltage drain current | IDSS | -1 | A | VDS=-20V,VGS=0V |
| Zero gate voltage drain current @ TJ=85C | IDSS | -30 | A | VDS=-20V,VGS=0V |
| On-state drain current (note 5) | ID(on) | -6 | A | VDS≤-5V,VGS=-4.5V |
| Drain-source on-state resistance (note 5) @ VGS=-4.5V, ID=-3.0A | RDS(on) | 66 ~ 85 | m | |
| Drain-source on-state resistance (note 5) @ VGS=-2.5V, ID=-1.0A | RDS(on) | 88 ~ 115 | m | |
| Forward transconductance (note 5) | gfs | 2.0 | S | VDS=-5V,ID=-3.0A |
| Dynamic | ||||
| Input capacitance | Ciss | 405 | pF | VDS=-10V,VGS=0V,f=1MHz |
| Output capacitance | Coss | 75 | pF | |
| Reverse transfer capacitance | Crss | 55 | pF | |
| Total gate charge | Qg | 5.5 ~ 10 | nC | VDS=-10V,VGS=-4.5V,ID=-3A |
| Gate-source charge | Qgs | 3.3 ~ 6 | nC | VDS=-10V,VGS=-2.5V,ID=-3A |
| Gate-drain charge | Qgd | 0.7 | nC | |
| Gate resistance | Rg | 6.0 | f=1MHz | |
| Turn-on delay time | td(on) | 11 ~ 20 | ns | VDD=-10V,RL=10, ID=-1A,VGEN=-4.5V, RG=1 |
| Rise time | tr | 35 ~ 60 | ns | |
| Turn-off delay time | td(off) | 30 ~ 50 | ns | |
| Fall time | tf | 10 ~ 20 | ns | |
| Drain-source body diode characteristics | ||||
| Continuous source-drain diode current | IS | -1.3 | A | TC=25C |
| Pulse diode forward current (Note 5) | ISM | -10 | A | |
| Body diode voltage | VSD | -0.7 ~ -1.3 | V | IS= -0.7A |
| Body diode reverse recovery time | trr | 30 ~ 50 | ns | IF=-3.0A,dI/dt=100A/s, TJ=25C |
| Body diode reverse recovery charge | Qrr | 25 ~ 50 | nC | |
| Reverse recovery fall time | ta | 15 | ns | |
| Reverse recovery rise time | tb | 15 | ns | |
2504101957_Guangdong-Hottech-SI2301_C181086.pdf
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