switching N channel MOSFET Guangdong Hottech 2SK3018 designed for and portable electronic devices
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-
RDS(on):
8Ω@4V,10mA
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
The 2SK3018 is an N-channel MOSFET designed for low on-resistance and very fast switching. Its low voltage drive capability makes it ideal for portable equipment, battery management, high-speed switching, and low-power DC to DC converter applications. It comes in a sub-miniature SOT-23 surface mount package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China (implied by company name and email)
- Material: Molded Plastic (UL flammability Classification Rating: 94V-0)
- Package: SOT-23 (Marking: KN)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
| MAXIMUM RATINGS | |||||
| Drain-source voltage | VDS | 30 | V | ||
| Gate-source voltage | VGS | ±20 | V | ||
| Continuous drain current | ID | 0.1 | A | ||
| Power dissipation | PD | 0.35 | W | ||
| Thermal resistance from Junction to ambient | RθJA | 357 | °C/W | ||
| Junction and Storage temperature | TJ,TSTG | -55 ~+150 | °C | ||
| ELECTRICAL CHARACTERISTICS | |||||
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | VGS=0V, ID=10μA | |
| Zero gate voltage drain current | IDSS | 0.2 | μA | VDS=30V, VGS=0V | |
| Gate-body leakage current | IGSS | ±2 | μA | VDS=0V, VGS=±20V | |
| Gate-threshold voltage (note 1) | VGS(th) | 0.8 | 1.5 | V | VDS=3V, ID=100μA |
| Drain-source on-resistance (note 1) | RDS(ON) | 8 | Ω | VGS=4V, ID=10mA | |
| 13 | Ω | VGS=2.5V, ID=1mA | |||
| Forward transconductance (note 1) | gFS | 20 | mS | VDS=3V, ID=10mA | |
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 13 | pF | VDS=5V, VGS=0V, f=1MHz | |
| Output capacitance | Coss | 9 | pF | ||
| Reverse transfer capacitance | Crss | 4 | pF | ||
| Switching Characteristics | |||||
| Turn-on delay time | td(on) | 15 | nS | VDD=5V,VGS=5V,ID =10mA, Rg=10Ω,RL=500Ω | |
| Turn-on rise time | tr | 35 | nS | ||
| Turn-off delay time | td(off) | 80 | nS | ||
| Turn-off fall time | tf | 80 | nS | ||
2410010331_Guangdong-Hottech-2SK3018_C181084.pdf
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