MOSFET Guangdong Hottech SI2312 perfect for DC to DC converter and load switch electronic applications
Key Attributes
Model Number:
SI2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
31.8mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
865pF@10V
Mfr. Part #:
SI2312
Package:
SOT-23
Product Description
Product Overview
The SI2312 is an N-channel, low-voltage MOSFET designed for low power DC-to-DC converter and load switch applications. It features ultra-low on-resistance, making it an efficient choice for surface mount devices.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250A | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS=20V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=8V | ||
| Gate-threshold voltage (note 1) | VGS(th) | 0.45 | 0.7 | 1.0 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance (note 1) | RDS(ON) | 18 | 31.8 | m | VGS=4.5V, ID=5A | |
| Drain-source on-resistance (note 1) | RDS(ON) | 23 | 35.6 | m | VGS=2.5V, ID=4.7A | |
| Drain-source on-resistance (note 1) | RDS(ON) | 30 | 41.4 | m | VGS=1.8V, ID=4.3A | |
| Forward transconductance (note 1) | gFS | 6 | S | VDS=10V, ID=5A | ||
| Gate resistance | Rg | 0.5 | 4.8 | f=1MHz | ||
| Input capacitance | Ciss | 865 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 105 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 55 | pF | VDS=10V, VGS=0V, f=1MHz | ||
| Turn-on delay time | td(on) | 10 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Turn-on rise time | tr | 20 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Turn-off delay time | td(off) | 32 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Turn-off fall time | tf | 12 | nS | VDD=30V, VGS=10V, RGEN=1, ID=1.5A | ||
| Diode forward voltage (note 1) | VSD | 0.75 | 1.2 | V | IS=4A, VGS=0V | |
| Drain-source voltage | VDS | 20 | V | |||
| Gate-source voltage | VGS | 8 | V | |||
| Continuous drain current | ID | 5 | A | |||
| Pulsed drain current (Note 1) | IDM | 20 | A | |||
| Continuous Source-Drain Diode current | IS | 1.04 | A | |||
| Power dissipation | PD | 0.35 | W | |||
| Thermal resistance from Junction to ambient | RJA | 357 | C/W | |||
| Junction temperature | TJ | 150 | C | |||
| Storage temperature | TSTG | -55 | ~+150 | C |
2410010201_Guangdong-Hottech-SI2312_C5364316.pdf
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