Fast switching N Channel MOSFET Guangdong Hottech HKTG48N10 with PDFN5x6 package and power management
Key Attributes
Model Number:
HKTG48N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
79A
RDS(on):
6.8mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
22pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
3.65nF@50V
Mfr. Part #:
HKTG48N10
Package:
PDFN5x6-8
Product Description
Product Overview
The HKTG48N10 is an N-Channel MOSFET designed for efficient power management. It features low on-resistance, fast switching speeds, and easily designed drive circuits, making it suitable for parallel applications. This MOSFET is housed in a PDFN5x6 package.
Product Attributes
- Brand: HKT (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)
- Product Code: HKTG48N10
- Package Type: PDFN5x6
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Weight: 0.016 grams (approximate)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| MAXIMUM RATINGS | ||||
| Drain-source voltage | VDS | 100 | V | TA = 25C unless otherwise noted |
| Gate-source voltage | VGS | ±20 | V | TA = 25C unless otherwise noted |
| Continuous drain current | ID | 79 | A | TA = 25C unless otherwise noted |
| Power dissipation | PD | 100 | W | TA = 25C unless otherwise noted |
| Thermal resistance from Junction to ambient | RθJA | 45 | °C/W | TA = 25°C unless otherwise noted |
| Junction and Storage temperature | TJ,TSTG | -55 ~+150 | °C | TA = 25°C unless otherwise noted |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=80V, VGS=0V |
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate-threshold voltage (note 1) | VGS(th) | 1.8 | V | VDS=20V,ID=250μA |
| Drain-source on-resistance (note 1) | RDS(ON) | 8 | mΩ | VGS=10V, ID=30A |
| Drain-source on-resistance (note 1) | RDS(ON) | 12.5 | mΩ | VGS=4.5V, ID=15A |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 3650 | pF | VDS=50V. VGS=0V, f=1MHz |
| Output capacitance | Coss | 320 | pF | VDS=50V. VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 22 | pF | VDS=50V. VGS=0V, f=1MHz |
| Switching Characteristics | ||||
| Turn-on delay time | td(on) | 16 | nS | VDD=50V. ID =40A Rg=2Ω |
| Turn-on rise time | tr | 11 | nS | VDD=50V. ID =40A Rg=2Ω |
| Turn-off delay time | td(off) | 35 | nS | VDD=50V. ID =40A Rg=2Ω |
| Turn-off fall time | tf | 9 | nS | VDD=50V. ID =40A Rg=2Ω |
| Note: 1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤2% . | ||||
2410121252_Guangdong-Hottech-HKTG48N10_C5364296.pdf
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