Fast switching N Channel MOSFET Guangdong Hottech HKTG48N10 with PDFN5x6 package and power management

Key Attributes
Model Number: HKTG48N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
79A
RDS(on):
6.8mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
22pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
3.65nF@50V
Mfr. Part #:
HKTG48N10
Package:
PDFN5x6-8
Product Description

Product Overview

The HKTG48N10 is an N-Channel MOSFET designed for efficient power management. It features low on-resistance, fast switching speeds, and easily designed drive circuits, making it suitable for parallel applications. This MOSFET is housed in a PDFN5x6 package.

Product Attributes

  • Brand: HKT (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)
  • Product Code: HKTG48N10
  • Package Type: PDFN5x6
  • Case Material: Molded Plastic
  • UL Flammability Classification Rating: 94V-0
  • Weight: 0.016 grams (approximate)

Technical Specifications

ParameterSymbolValueUnitConditions
MAXIMUM RATINGS
Drain-source voltageVDS100VTA = 25C unless otherwise noted
Gate-source voltageVGS±20VTA = 25C unless otherwise noted
Continuous drain currentID79ATA = 25C unless otherwise noted
Power dissipationPD100WTA = 25C unless otherwise noted
Thermal resistance from Junction to ambientRθJA45°C/WTA = 25°C unless otherwise noted
Junction and Storage temperatureTJ,TSTG-55 ~+150°CTA = 25°C unless otherwise noted
ELECTRICAL CHARACTERISTICS
Drain-Source breakdown voltageV(BR)DSS100VVGS=0V, ID=250uA
Zero gate voltage drain currentIDSS1µAVDS=80V, VGS=0V
Gate-body leakage currentIGSS±100nAVDS=0V, VGS=±20V
Gate-threshold voltage (note 1)VGS(th)1.8VVDS=20V,ID=250μA
Drain-source on-resistance (note 1)RDS(ON)8VGS=10V, ID=30A
Drain-source on-resistance (note 1)RDS(ON)12.5VGS=4.5V, ID=15A
Dynamic Characteristics
Input capacitanceCiss3650pFVDS=50V. VGS=0V, f=1MHz
Output capacitanceCoss320pFVDS=50V. VGS=0V, f=1MHz
Reverse transfer capacitanceCrss22pFVDS=50V. VGS=0V, f=1MHz
Switching Characteristics
Turn-on delay timetd(on)16nSVDD=50V. ID =40A Rg=2Ω
Turn-on rise timetr11nSVDD=50V. ID =40A Rg=2Ω
Turn-off delay timetd(off)35nSVDD=50V. ID =40A Rg=2Ω
Turn-off fall timetf9nSVDD=50V. ID =40A Rg=2Ω
Note: 1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤2% .

2410121252_Guangdong-Hottech-HKTG48N10_C5364296.pdf

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