N channel power MOSFET Guangdong Hottech HKTD5N50 offers avalanche voltage and current characteristics
Key Attributes
Model Number:
HKTD5N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.7Ω@10V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
22W
Input Capacitance(Ciss):
480pF
Gate Charge(Qg):
12.8nC@5V
Mfr. Part #:
HKTD5N50
Package:
TO-252
Product Description
N-CHANNEL Power MOSFET - HKTD5N50
This N-CHANNEL Power MOSFET offers high performance with features like a 500V drain-source voltage, 5A continuous drain current, and a low RDS(ON) of 1.6 (max.) at VGS=10V. Its high-density cell design ensures ultra-low on-resistance, and it is fully characterized for avalanche voltage and current. Designed for efficient power management, this MOSFET is suitable for various applications requiring robust and reliable performance.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: HKTD5N50
- Case: TO-252
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Origin: Shenzhen, China
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Maximum Ratings | VDS | 500 | V | |||
| VGS | ±30 | V | ||||
| ID | 5 | A | VGS=10V | |||
| IDM | 16 | A | Pulsed drain current (Note 1) | |||
| PD | 110 | W | ||||
| Electrical Characteristics | V(BR)DS | 500 | V | VGS=0V,ID=250µA | ||
| IDSS | 100 | nA | VDS=500V, VGS=0V | |||
| IGSS | ±90 | nA | VDS=0V, VGS=±30V | |||
| VGS(th) | 2.0 | 4.0 | V | VDS=VGS, ID=250µA | ||
| On Characteristics | RDS(ON) | 1.35 | 1.6 | Ω | VGS=10V,ID=2.5A | |
| RDS(ON) | 1.45 | 1.7 | Ω | VGS=10V, ID=1A | ||
| Dynamic Characteristics | Ciss | 480 | pF | VGS=0V VDS=25V f=1.0MHz | ||
| Coss | 80 | pF | ||||
| Crss | 15 | pF | ||||
| Switching Characteristics | td(on) | 12 | ns | VDD=250V ID=5 A RG=25Ω VGS=10V | ||
| tr | 46 | ns | ||||
| td(off) | 50 | ns | ||||
| tf | 48 | ns | ||||
| Gate Charge | Qg | 12.8 | nC | VDS=400V,ID=5A VGS=10V | ||
| Qgs | 4 | nC | ||||
| Qgd | 4.5 | nC | ||||
| Diode Characteristics | VSD | 1.5 | V | IS=5A, VGS=0V | ||
| ISM | 16 | A | Pulsed drain-source diode forward current |
2410121815_Guangdong-Hottech-HKTD5N50_C5364287.pdf
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