Low On Resistance 100V N Channel MOSFET HUAKE HST502 Suitable for High Frequency Switching Mode Power
Key Attributes
Model Number:
HST502
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
5.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25.7pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
3.81nF@40V
Pd - Power Dissipation:
172W
Gate Charge(Qg):
64nC@10V
Mfr. Part #:
HST502
Package:
TO-220C
Product Description
Product Overview
The HST502 is a 100V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers a continuous drain current of 120A (package limit) and a low on-resistance of 4.9m (typ) at VGS=10V. Key features include low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power electronics designs.
Product Attributes
- Brand: HUAKE semiconductors
- Product Name: HST502
- Channel Type: N-Channel
- Voltage Rating: 100V
- Version: 1.0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Drain Current - Continuous (Tc=25C, Package limit) | ID | 120 | A | |||
| Drain Current - Pulsed | IDM | 480 | A | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Power Dissipation (TC =25C) | PD | 172 | W | |||
| Operating Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RJC | (Note2) | 0.73 | C/W | ||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source Breakdown Voltage | BVDSS | VGS=0V ,ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current, Forward | IGSSF | VGS=+20V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse | IGSSR | VGS=-20V, VDS=0V | -100 | nA | ||
| On Characteristics (Note3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10 V, ID=50A | 4.9 | 5.4 | m | |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Ciss | VDS=40V,VGS=0V, f=1.0MHz | 3810 | pF | ||
| Output Capacitance | Coss | 649 | pF | |||
| Reverse Transfer Capacitance | Crss | 25.7 | pF | |||
| Switching Characteristics (Note4) | ||||||
| Turn-On Delay Time | td(on) | VDD = 40 V, ID =13.3 A, RG =24 , VGS=10V | 48 | ns | ||
| Turn-On Rise Time | tr | 74 | ns | |||
| Turn-Off Delay Time | td(off) | 155 | ns | |||
| Turn-Off Fall Time | tf | 86 | ns | |||
| Gate Charge Characteristics (Note4) | ||||||
| Total Gate Charge | Qg | VDS = 80 V, ID =50A, VGS = 10 V | 64 | nC | ||
| Gate-Source Charge | Qgs | 23 | nC | |||
| Gate-Drain Charge | Qgd | 17 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | (Note2) | 120 | A | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 480 | A | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V,IS=50A (Note3) | 1.3 | V | ||
| Reverse Recovery Time | trr | VGS =0V, IS=20A, d IF /dt=100A/s (Note3) | 65 | ns | ||
| Reverse Recovery Charge | Qrr | 148 | nC | |||
2410121937_HUAKE-HST502_C19725821.pdf
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