Power Management Device Guangdong Hottech IRLML0030 N Channel MOSFET with Fast Switching Capabilities
Key Attributes
Model Number:
IRLML0030
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
RDS(on):
27mΩ@10V,5.2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
39pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
382pF@15V
Gate Charge(Qg):
2.6nC
Mfr. Part #:
IRLML0030
Package:
SOT-23
Product Description
Product Overview
The IRLML0030 is an N-channel MOSFET designed for surface mounting. It features a low on-resistance, fast switching capabilities, and a drain-source voltage of 30V with a continuous drain current of 5.3A. This device is suitable for various electronic applications requiring efficient power management.
Product Attributes
- Brand: HOTTECH (SHENZHEN HOTTECH ELECTRONICS CO.,LTD, GUANGDONG HOTTECH INDUSTRIAL CO.,LTD)
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | 30 | V | |
| Gate-source voltage | VGS | 20 | V | |
| Continuous drain current (TA=25C) | ID | 5.3 | A | TA=25C |
| Continuous drain current (TA=70C) | ID | 4.3 | A | TA=70C |
| Pulsed drain current | IDM | 21 | A | Note 1 |
| Power dissipation (TA=25C) | PD | 1.3 | W | TA=25C |
| Power dissipation (TA=70C) | PD | 0.8 | W | TA=70C |
| Linear Derating Factor | 0.01 | W/C | ||
| Thermal resistance from Junction to ambient | RJA* | 100 | C/W | *Surface mounted on 1 in square Cu board |
| Storage and Junction temperature | TJ,TSTG | -55 ~+150 | C | |
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250A |
| Zero gate voltage drain current | IDSS | 1 | A | VDS=24V, VGS=0V |
| Zero gate voltage drain current (Tj=125C) | IDSS | 150 | A | VDS=24V, VGS=0V,Tj=125C |
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V |
| Gate-threshold voltage | VGS(th) | 1.3 ~ 2.3 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance (VGS=4.5V) | RDS(ON) | 22 ~ 33 | m | VGS=4.5V, ID=4.2A, Note 1 |
| Drain-source on-resistance (VGS=10V) | RDS(ON) | 27 ~ 40 | m | VGS=10V, ID=5.2A, Note 1 |
| Internal Gate Resistance | RG | 2.3 | ||
| Forward transconductance | gFS | 9.5 | S | VDS=10V, ID=5.2A, Note 1 |
| Input capacitance | Ciss | 382 | pF | VDS=15V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 84 | pF | VDS=15V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 39 | pF | VDS=15V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 5.2 | nS | VDD=15V,ID=1A, RG=6.8,VGS=4.5V |
| Turn-on rise time | tr | 4.4 | nS | VDD=15V,ID=1A, RG=6.8,VGS=4.5V |
| Turn-off delay time | td(off) | 7.4 | nS | VDD=15V,ID=1A, RG=6.8,VGS=4.5V |
| Turn-off fall time | tf | 4.4 | nS | VDD=15V,ID=1A, RG=6.8,VGS=4.5V |
| Total gate charge | Qg | 2.6 | nC | VDS=15V,VGS=4.5V,ID=5.2A |
| Gate-source charge | Qgs | 0.8 | nC | VDS=15V,VGS=4.5V,ID=5.2A |
| Gate-drain charge | Qgd | 1.1 | nC | VDS=15V,VGS=4.5V,ID=5.2A |
| Diode forward current (Body Diode) | IS | 1.6 | A | |
| Pulsed Source Current (Body Diode) | ISM | 21 | A | |
| Diode forward voltage (Body Diode) | VSD | 1.2 | V | IS=1.6A, VGS=0V,Tj=25C, Note 1 |
| Reverse Recovery Time | trr | 11 ~ 17 | nS | TJ=25C,VR=15V,IF=1.6A, di/dt=100A/s |
| Reverse Recovery Charge | Qrr | 4.0 ~ 6.0 | nC | TJ=25C,VR=15V,IF=1.6A, di/dt=100A/s |
2410121947_Guangdong-Hottech-IRLML0030_C5364304.pdf
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