600V N Channel MOSFET HUAKE SMF7N60 featuring low gate charge and fast switching for power supply design

Key Attributes
Model Number: SMF7N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.38nF@25V
Pd - Power Dissipation:
48W
Mfr. Part #:
SMF7N60
Package:
TO-220F
Product Description

Product Overview

The SMF7N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering reliable performance in demanding applications.

Product Attributes

  • Brand: HUAKE semiconductors
  • Model: SMF7N60
  • Voltage Rating: 600V
  • Channel Type: N-Channel
  • Package Type: TO-220F
  • Document Version: B/0
  • Document Date: 2017.08

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
Absolute Maximum Ratings
VDSSDrain-Source Voltage600V
IDDrain Current - Continuous (Tc=25C)7.0*A
IDDrain Current - Continuous (Tc=100C)4.5*A
IDMDrain Current - Pulsed (Note1)28*A
VGSSGate-Source Voltage30V
EASSingle Pulsed Avalanche Energy (Note2)590mJ
IARAvalanche Current (Note1)7.0A
EARRepetitive Avalanche Energy (Note1)14.0mJ
dv/dtPeak Diode Recovery dv/dt (Note3)4.5V/ns
PDPower Dissipation (TC =25C)48W
PDDerate above 25C0.38W/C
TjOperating Junction Temperature150C
TstgStorage Temperature Range-55+150C
Thermal Characteristics
RJCThermal Resistance, Junction to Case2.6C /W
RJAThermal Resistance, Junction to Ambient62.5C /W
Electrical Characteristics (Tc=25C unless otherwise noted)
BVDSSDrain-source Breakdown VoltageVGS=0V ,ID=250A600----V
BVDSS /TJBreakdown Voltage Temperature CoefficientID=250A (Referenced to 25C)--0.7--V/C
IDSSZero Gate Voltage Drain CurrentVDS=600V,VGS=0V----1A
IDSSZero Gate Voltage Drain CurrentVDS=480V,Tc=125C----10A
IGSSFGate-Body Leakage Current,ForwardVGS=+30V, VDS=0V----100nA
IGSSRGate-Body Leakage Current,ReverseVGS=-30V, VDS=0V-----100nA
VGS(th)Gate Threshold VoltageVDS= VGS, ID=250A2.0--4.0V
RDS(on)Static Drain-Source On-ResistanceVGS=10 V, ID=3.5A--1.01.2
gFSForward TransconductanceVDS=40 V, ID=3.5A (Note4)--6.5--S
Dynamic Characteristics
CissInput CapacitanceVDS=25V,VGS=0V, f=1.0MHz--1380--pF
CossOutput Capacitance--170--pF
CrssReverse Transfer Capacitance--15--pF
Switching Characteristics
td(on)Turn-On Delay TimeVDD = 300 V, ID = 7.0 A, RG = 25 (Note4,5)--13--ns
trTurn-On Rise Time--100--ns
td(off)Turn-Off Delay Time--126--ns
tfTurn-Off Fall Time--48--ns
QgTotal Gate ChargeVDS = 480 V, ID =7.0 A, VGS = 10 V (Note4,5)--30--nC
QgsGate-Source Charge--6--nC
QgdGate-Drain Charge--14--nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current----7.0A
ISMMaximum Pulsed Drain-Source Diode Forward Current----28A
VSDDrain-Source Diode Forward VoltageVGS =0V,IS=7.0A----1.4V
trrReverse Recovery TimeVGS =0V, IS=7.0A, d IF /dt=100A/s (Note4)--315--ns
QrrReverse Recovery Charge--2.6--C

2410122013_HUAKE-SMF7N60_C570137.pdf

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