power management device HUAKE SMF7N65 650V N Channel MOSFET for switching and correction applications
Key Attributes
Model Number:
SMF7N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.38nF@25V
Pd - Power Dissipation:
48W
Mfr. Part #:
SMF7N65
Package:
TO-220F
Product Description
Product Overview
The SMF7N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers excellent performance with features like low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power applications.
Product Attributes
- Brand: HUAKE semiconductors
- Product Code: SMF7N65
- Package: TO-220F
- Document Version: B/0
- Document Date: 2017.08
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 650 | V | |||
| Drain Current - Continuous (ID) | Tc=25C | 7.0* | A | ||
| Drain Current - Continuous (ID) | Tc=100C | 4.5* | A | ||
| Drain Current - Pulsed (IDM) | (Note1) | 28* | A | ||
| Gate-Source Voltage (VGSS) | 30 | V | |||
| Single Pulsed Avalanche Energy (EAS) | (Note2) | 590 | mJ | ||
| Avalanche Current (IAR) | (Note1) | 7.0 | A | ||
| Repetitive Avalanche Energy (EAR) | (Note1) | 14.0 | mJ | ||
| Peak Diode Recovery dv/dt (dv/dt) | (Note3) | 4.5 | V/ns | ||
| Power Dissipation (PD) | TC =25C | 48 | W | ||
| Derate above 25C | 0.38 | W/C | |||
| Operating Junction Temperature (Tj) | 150 | C | |||
| Storage Temperature Range (Tstg) | -55 | +150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 2.6 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 62.5 | C/W | |||
| Electrical Characteristics | |||||
| Drain-source Breakdown Voltage (BVDSS) | VGS=0V, ID=250A | 650 | V | ||
| Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.7 | V/C | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=650V,VGS=0V | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=520V,Tc=125C | 10 | A | ||
| Gate-Body Leakage Current, Forward (IGSSF) | VGS=+30V, VDS=0V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse (IGSSR) | VGS=-30V, VDS=0V | -100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 2.0 | 4.0 | V | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS=10 V, ID=3.5A | 1.2 | 1.4 | ||
| Forward Transconductance (gFS) | VDS=40 V, ID=3.5A (Note4) | 6.5 | S | ||
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS=25V,VGS=0V, f=1.0MHz | 1380 | pF | ||
| Output Capacitance (Coss) | VDS=25V,VGS=0V, f=1.0MHz | 170 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS=25V,VGS=0V, f=1.0MHz | 15 | pF | ||
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 325 V, ID = 7.0 A, RG = 25 (Note4,5) | 13 | ns | ||
| Turn-On Rise Time (tr) | VDD = 325 V, ID = 7.0 A, RG = 25 (Note4,5) | 100 | ns | ||
| Turn-Off Delay Time (td(off)) | VDD = 325 V, ID = 7.0 A, RG = 25 (Note4,5) | 126 | ns | ||
| Turn-Off Fall Time (tf) | VDD = 325 V, ID = 7.0 A, RG = 25 (Note4,5) | 48 | ns | ||
| Total Gate Charge (Qg) | VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) | 30 | nC | ||
| Gate-Source Charge (Qgs) | VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) | 6 | nC | ||
| Gate-Drain Charge (Qgd) | VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) | 14 | nC | ||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 7.0 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current (ISM) | 28 | A | |||
| Drain-Source Diode Forward Voltage (VSD) | VGS =0V,IS=7.0A | 1.4 | V | ||
| Reverse Recovery Time (trr) | VGS =0V, IS=7.0A, d IF /dt=100A/s (Note4) | 315 | ns | ||
| Reverse Recovery Charge (Qrr) | VGS =0V, IS=7.0A, d IF /dt=100A/s (Note4) | 2.6 | C | ||
2410122013_HUAKE-SMF7N65_C563584.pdf
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