650V N Channel MOSFET HUAKE SMD4N65 designed for high frequency switching and power factor correction circuits
Key Attributes
Model Number:
SMD4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
10pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
510pF@25V
Pd - Power Dissipation:
51W
Mfr. Part #:
SMD4N65
Package:
TO-252
Product Description
Product Overview
The SMD4N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power electronics designs.
Product Attributes
- Brand: HUAKE semiconductors
- Model: SMD4N65
- Channel Type: N-Channel
- Year: 2017.08
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current - Continuous | (TC=25C) | 4.0* | A | ||
| (TC=100C) | 2.5* | A | ||||
| IDM | Drain Current - Pulsed (Note1) | 16* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 240 | mJ | |||
| IAR | Avalanche Current (Note1) | 4.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 10.0 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation | (TC =25C) | 51 | W | ||
| -Derate above 25C | 0.39 | W/C | ||||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.5 | C /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 83 | C /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 650 | V | ||
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | 0.65 | V/C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=650V,VGS=0V | 1 | A | ||
| VDS=520V,TC=125C | 10 | A | ||||
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | 100 | nA | ||
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | 4.0 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=2.0A | 2.2 | 2.6 | ||
| gFS | Forward Transconductance | VDS=40 V, ID=2.0A (Note4) | 3.6 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | 510 | pF | ||
| Coss | Output Capacitance | 70 | pF | |||
| Crss | Reverse Transfer Capacitance | 10 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325 V, ID = 4.0 A, RG = 25 (Note4,5) | 16 | ns | ||
| tr | Turn-On Rise Time | 49 | ns | |||
| td(off) | Turn-Off Delay Time | 45 | ns | |||
| tf | Turn-Off Fall Time | 36 | ns | |||
| Qg | Total Gate Charge | VDS = 520 V, ID =4.0 A, VGS = 10 V (Note4,5) | 13 | nC | ||
| Qgs | Gate-Source Charge | 3.8 | nC | |||
| Qgd | Gate-Drain Charge | 4.9 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | 4.0 | A | |||
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | 16 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=4.0A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS =0V, IS=4.0A, d IF/dt=100A/s (Note4) | 330 | ns | ||
| Qrr | Reverse Recovery Charge | 2.67 | C | |||
2410122013_HUAKE-SMD4N65_C570147.pdf
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