SOT 23 Package P Channel Low Voltage MOSFET Guangdong Hottech SI2309DS for Power Management Circuits
Key Attributes
Model Number:
SI2309DS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-
RDS(on):
200mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
15pF@30V
Number:
1 P-Channel
Input Capacitance(Ciss):
310pF@30V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
2.7nC@4.5V
Mfr. Part #:
SI2309DS
Package:
SOT-23
Product Description
LOW VOLTAGE MOSFET (P-CHANNEL)
This P-Channel Low Voltage MOSFET offers low on-resistance and is designed for DC to DC converter and load switch applications. It is a surface mount device in a SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: SI2309
- Package: SOT-23
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Weight: 0.008 grams (approximate)
- Contact: E-mail:hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | -60 | V | |
| Gate-source voltage | VGS | ±20 | V | |
| Continuous drain current | ID | -2.0 | A | |
| Pulsed Drain Current (10µs Pulse Width) | IDM | -8 | A | |
| Power dissipation | PD | 1.0 | W | TA = 25°C |
| Thermal resistance from Junction to ambient | RθJA | 125 | °C/W | |
| Junction temperature | TJ | 150 | °C | |
| Storage temperature | TSTG | -50 ~+150 | °C | |
| Drain-Source breakdown voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250µA |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS=-60V, VGS=0V |
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate-threshold voltage (note 1) | VGS(th) | -1 ~ -3 | V | VDS=VGS, ID=-250µA |
| Drain-source on-resistance (note 1) | RDS(ON) | 150 ~ 200 | mΩ | VGS=-10V, ID=-2.0A |
| Drain-source on-resistance (note 1) | RDS(ON) | 200 ~ 300 | mΩ | VGS=-4.5V, ID=-1.0A |
| Forward transconductance (note 1) | gFS | 2.8 | S | VDS=-10V, ID=-1.0A |
| Gate resistance | Rg | 7 | Ω | f=1MHz |
| Input capacitance | Ciss | 310 | pF | VDS=-30V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 28 | pF | VDS=-30V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 15 | pF | VDS=-30V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 40 | nS | VDD=-30V,ID=-1A, VGEN=-4.5V,Rg=1Ω,RL=30Ω |
| Turn-on rise time | tr | 35 | nS | VDD=-30V,ID=-1A, VGEN=-4.5V,Rg=1Ω,RL=30Ω |
| Turn-off delay time | td(off) | 15 | nS | VDD=-30V,ID=-1A, VGEN=-4.5V,Rg=1Ω,RL=30Ω |
| Turn-off fall time | tf | 10 | nS | VDD=-30V,ID=-1A, VGEN=-4.5V,Rg=1Ω,RL=30Ω |
| Turn-on delay time | td(on) | 5 | nS | VDD=-30V,ID=-1A, VGEN=-10V,Rg=1Ω,RL=30Ω |
| Turn-on rise time | tr | 10 | nS | VDD=-30V,ID=-1A, VGEN=-10V,Rg=1Ω,RL=30Ω |
| Turn-off delay time | td(off) | 15 | nS | VDD=-30V,ID=-1A, VGEN=-10V,Rg=1Ω,RL=30Ω |
| Turn-off fall time | tf | 10 | nS | VDD=-30V,ID=-1A, VGEN=-10V,Rg=1Ω,RL=30Ω |
| Total gate charge | Qg | 2.7 | nC | VDD=-30V,VGS=-4.5V,ID=-1.25A |
| Gate-source charge | Qgs | 0.8 | nC | VDD=-30V,VGS=-4.5V,ID=-1.25A |
| Gate-drain charge | Qg | 1.2 | nC | VDD=-30V,VGS=-4.5V,ID=-1.25A |
| Diode forward voltage (note 1) | VSD | -0.8 ~ -1.2 | V | IS=-1.5A, VGS=0V |
| Diode forward current | IS | -1.4 | A | TC = 25°C |
| Pulse diode forward current | ISM | -8 | A | |
| Body diode reverse recovery time | trr | 30 ~ 60 | nS | IF=-1.25A,dI/dt=100A/μs,TJ=25°C |
| Body diode reverse recovery charge | Qrr | 33 ~ 60 | nC | IF=-1.25A,dI/dt=100A/μs,TJ=25°C |
Note: 1. Pulse test; Pulse width ≤300µs, Duty cycle ≤2%.
2410122022_Guangdong-Hottech-SI2309DS_C5364314.pdf
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