Power MOSFET Guangdong Hottech HKTD120N04 with 40V drain source voltage and 120A continuous drain current
Key Attributes
Model Number:
HKTD120N04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
3.5mΩ@4.5V,50A
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
360pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
110W
Input Capacitance(Ciss):
4.62nF
Gate Charge(Qg):
-
Mfr. Part #:
HKTD120N04
Package:
TO-252
Product Description
Product Overview
The HKTD120N04 is an N-CHANNEL Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is suitable for applications requiring efficient power handling and reliable operation.
Product Attributes
- Brand: HOTTECH ELECTRONICS CO.,LTD
- Origin: SHENZHEN
- Case Material: Molded Plastic
- Flammability: UL 94V-0
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| FEATURES | ||||||
| Drain-Source Voltage | VDS | 40 | V | Max. | ||
| Continuous Drain Current | ID | 120 | A | Max. | ||
| RDS(ON) @ VGS=10V | RDS(ON) | 2.6 | m | Max. | ||
| RDS(ON) @ VGS=4.5V | RDS(ON) | 3.5 | m | Max. | ||
| High density cell design | For ultra low on-resistance | |||||
| Fully characterized avalanche | Voltage and current | |||||
| MECHANICAL DATA | ||||||
| Case | TO-252 | |||||
| Case material | Molded Plastic | |||||
| Weight | 0.33 | grams | Approximate | |||
| Marking | D120N04 | |||||
| MAXIMUM RATINGS (TA=25C unless otherwise noted) | ||||||
| Drain-source voltage | VDS | 40 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | 120 | A | |||
| Pulsed drain current | IDM | 360 | A | (Note 1) | ||
| Power dissipation | PD | 20 | W | |||
| Thermal resistance from junction to ambient | RJA | 110 | C/W | |||
| Operating junction and storage temperature | TJ,TSTG | -55 | +150 | C | ||
| Single Pulsed Avalanche Energy | EAS | 70 | mJ | (note 1) | ||
| Lead Temperature for Soldering Purposes (1/8 from case for 10s) | TL | 260 | C | |||
| ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) | ||||||
| Off characteristics | ||||||
| Drain-Source breakdown voltage | V(BR)DS | 40 | V | VGS=0V,ID=250A | ||
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=40V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| On characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | 1.1 | 1.5 | 2.2 | V | VDS=VGS, ID=250A |
| Drain-source on-resistance | RDS(ON) | 1.7 | 2.6 | m | VGS=10V, ID=50A | |
| Drain-source on-resistance | RDS(ON) | 2.5 | 3.5 | m | VGS=4.5V,ID=50A | |
| Forward transconductance | gFS | 10 | S | VDS=5V,ID=50A | ||
| Dynamic characteristics (Guaranteed by design, not subject to production) | ||||||
| Input capacitance | Ciss | 4620 | pF | VGS=0V, VDS=20V f=1.0MHz | ||
| Output capacitance | Coss | 430 | pF | |||
| Reverse transfer capacitance | Crss | 360 | pF | |||
| Switching characteristics (Guaranteed by design, not subject to production) | ||||||
| Turn-on delay time | td(on) | 15 | ns | VDD=20V ID=20A RG=3 VGS=10V | ||
| Turn-on rise time | tr | 55 | ns | |||
| Turn-off delay time | td(off) | 120 | ns | |||
| Turn-off fall time | tf | 80 | ns | |||
| Total gate charge | Qg | 100 | nC | VDS=10V,VGS=10V, ID=20A | ||
| Gate-source charge | Qgs | 16 | nC | |||
| Gate-drain charge | Qgd | 22 | nC | |||
| Drain-source diode characteristics | ||||||
| Diode forward voltage | VSD | 1.2 | V | VGS=0V, IS=15A | ||
| Max. forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 120 | A | |||
2410121609_Guangdong-Hottech-HKTD120N04_C5364295.pdf
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