Low Profile Power MOSFET Guangdong Hottech IRLML5103 P Channel Device with Fast Switching Performance
Key Attributes
Model Number:
IRLML5103
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
760mA
RDS(on):
1Ω@4.5V,0.3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 P-Channel
Pd - Power Dissipation:
540mW
Input Capacitance(Ciss):
75pF
Gate Charge(Qg):
5.1nC@10V
Mfr. Part #:
IRLML5103
Package:
SOT-23
Product Description
Product Overview
The IRLML5103 is a P-Channel Power MOSFET featuring Generation V Technology for ultra-low on-resistance and a low profile (<1.1mm). It offers fast switching capabilities, making it suitable for various power management applications. The device is supplied in a SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic, UL flammability Classification Rating: 94V-0
- Package: SOT-23
Technical Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
| Continuous Drain Current, VGS @ -10V (TA = 25C) | -0.76 | A | |||
| Continuous Drain Current, VGS @ -10V (TA = 70C) | -0.61 | A | |||
| Pulsed Drain Current | -4.8 | A | IDM | ||
| Power Dissipation (TA = 25C) | 540 | mW | PD | ||
| Gate-to-Source Voltage | ±20 | V | VGS | ||
| Peak Diode Recovery dv/dt | -5.0 | V/ns | dv/dt | ||
| Junction and Storage Temperature Range | -55 | +150 | C | TJ, TSTG | |
| Maximum Junction-to-Ambient | 230 | C/W | RJA | ||
| Drain-to-Source Breakdown Voltage | -30 | V | VGS = 0V, ID = -250A, V(BR)DSS | ||
| Breakdown Voltage Temp. Coefficient | -0.029 | V/C | Reference to 25C, ID = -1mA, V(BR)DSS/TJ | ||
| Static Drain-to-Source On-Resistance (VGS = -10V, ID = -0.60A) | 0.60 | Ω | RDS(ON) | ||
| Static Drain-to-Source On-Resistance (VGS = -4.5V, ID = -0.30A) | 1.0 | Ω | RDS(ON) | ||
| Gate Threshold Voltage | -1.0 | V | VDS = VGS, ID = -250A, VGS(th) | ||
| Forward Transconductance | 0.44 | S | VDS = -10V, ID = -0.30A, gfs | ||
| Drain-to-Source Leakage Current (VDS = -24V, VGS = 0V) | -1.0 | µA | IDSS | ||
| Drain-to-Source Leakage Current (VDS = -24V, VGS = 0V, TJ = 125C) | -25 | µA | IDSS | ||
| Gate-to-Source Forward Leakage (VGS = -20V) | -100 | nA | IGSS | ||
| Gate-to-Source Reverse Leakage (VGS = 20V) | 100 | nA | IGSS | ||
| Total Gate Charge | 3.4 | 5.1 | nC | ID = -0.60A, VDS = -24V, VGS = -10V, Qg | |
| Gate-to-Source Charge | 0.52 | 0.78 | nC | Qgs | |
| Gate-to-Drain ("Miller") Charge | 1.1 | 1.7 | nC | Qgd | |
| Turn-On Delay Time | 10 | ns | VDD = -15V, ID = -0.60A, RG = 6.2Ω, RD = 25Ω, td(on) | ||
| Rise Time | 8.2 | ns | tr | ||
| Turn-Off Delay Time | 23 | ns | td(off) | ||
| Fall Time | 16 | ns | tf | ||
| Input Capacitance | 75 | pF | VGS = 0V, VDS = -25V, = 1.0MHz, Ciss | ||
| Output Capacitance | 37 | pF | Coss | ||
| Reverse Transfer Capacitance | 18 | pF | Crss | ||
| Continuous Source Current (Body Diode) | -0.54 | A | IS | ||
| Pulsed Source Current (Body Diode) | -4.8 | A | ISM | ||
| Diode Forward Voltage (TJ = 25C, IS = -0.60A, VGS = 0V) | -1.2 | V | VSD | ||
| Reverse Recovery Time | 26 | 39 | ns | TJ = 25C, IF = -0.60A, di/dt = 100A/µs, trr | |
| Reverse Recovery Charge | 20 | 30 | nC | TJ = 25C, IF = -0.60A, di/dt = 100A/µs, Qrr |
2410121947_Guangdong-Hottech-IRLML5103_C5364309.pdf
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