Low Gate Charge N Channel MOSFET Guangdong Hottech FL8205 with High Current Capability and Performance
Key Attributes
Model Number:
FL8205
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
19mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
2 N-Channel
Output Capacitance(Coss):
330pF
Input Capacitance(Ciss):
600pF@8V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
FL8205
Package:
TSSOP-8
Product Description
Product Overview
The FL8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, providing high power and current handling capability.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Lead Free: Yes
- Package: TSSOP-8
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=3.5A | - | 25 | 35 | m |
| VGS=4.5V, ID=4.5A | - | 19 | 25 | m | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.7 | 1.2 | V |
| Input Capacitance | Ciss | - | 600 | - | PF | |
| Output Capacitance | Coss | - | 330 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=8V,VGS=0V, F=1.0MHz | - | 140 | - | PF |
| Turn-on Delay Time | td(on) | VDD=10V,ID=1A, VGS=4.5V,RGEN=6 | - | 10 | 20 | nS |
| Turn-on Rise Time | tr | VDD=10V,ID=1A, VGS=4.5V,RGEN=6 | - | 11 | 25 | nS |
| Turn-Off Delay Time | td(off) | VDD=10V,ID=1A, VGS=4.5V,RGEN=6 | - | 35 | 70 | nS |
| Turn-Off Fall Time | tf | VDD=10V,ID=1A, VGS=4.5V,RGEN=6 | - | 30 | 60 | nS |
| Total Gate Charge | Qg | VDS=10V,ID=6A, VGS=4.5V | - | 10 | 15 | nC |
| Gate-Source Charge | Qgs | VDS=10V,ID=6A, VGS=4.5V | - | 2.3 | - | nC |
| Gate-Drain Charge | Qgd | VDS=10V,ID=6A, VGS=4.5V | - | 1.5 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=1.7A | - | 0.75 | 1.2 | V |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250A | 20 | 21 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=19.5V,VGS=0V | - | - | 1 | A |
| Drain-Source Voltage | VDS | - | - | 20 | V | |
| Gate-Source Voltage | VGS | - | - | 10 | V | |
| Drain Current-Continuous | ID | - | - | 6 | A | |
| Drain Current-Pulsed | IDM | - | - | 25 | A | |
| Maximum Power Dissipation | PD | - | - | 1.5 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | - | 83 | - | /W | |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | - | 100 | nA |
2410010132_Guangdong-Hottech-FL8205_C5190143.pdf
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