P channel MOSFET HUASHUO HSH90P06 featuring high cell density trench technology for power management
Key Attributes
Model Number:
HSH90P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
210W
Gate Charge(Qg):
170nC@10V
Mfr. Part #:
HSH90P06
Package:
TO-263
Product Description
Product Overview
The HSH90P06 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | -85 | A | |||
| ID@TC=100 | Continuous Drain Current1 | -60 | A | |||
| IDM | Pulsed Drain Current2 | -310 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 360 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 210 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.71 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-40A | 7.5 | 9 | m | |
| VGS=-4.5V , ID=-30A | 9 | 11 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.4 | -3.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=-48V , VGS=0V , TJ=55 | --- | 50 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 3.4 | --- | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-48V , VGS=-10V , ID=-40A | 170 | --- | nC | |
| Qgs | Gate-Source Charge | 29 | --- | |||
| Qgd | Gate-Drain Charge | 35 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=-30V , VGS=-10V , RG=4, ID=-40A | 15 | --- | ns | |
| Tr | Rise Time | 88 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 150 | --- | ns | ||
| Tf | Fall Time | 101 | --- | ns | ||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 9188 | --- | pF | |
| Coss | Output Capacitance | 501 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 234 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -85 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-40A , TJ=25 | --- | -1.3 | V | |
| Trr | Reverse Recovery Time | ISD=-40A,dI/dt=100A/us | 21 | --- | ns | |
| Qrr | Reverse Recovery Charge | 17 | --- | nC | ||
2410121631_HUASHUO-HSH90P06_C845625.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
