High gain low noise NPN silicon epitaxial bipolar transistor GUOXIN JIAPIN SEMICONDUCTOR FCR520B in SOT 23 package
Key Attributes
Model Number:
FCR520B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
8GHz
Type:
NPN
Current - Collector(Ic):
70mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
FCR520B
Package:
SOT-23
Product Description
Product Overview
The FCR520B is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain, low noise figure, wide dynamic range, and ideal current characteristics. Packaged in a SOT-23 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Material: NPN Silicon Epitaxial Bipolar
- Packaging: SOT-23
- Standard Packaging: 3K/Reel
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Condition |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | HFE | 90 | 150 | 250 | VCE=6V,IC=20mA | |
| Gain Bandwidth Product | fT | 8 | GHz | VCE=6V,IC=20mA,f=1GHz | ||
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V,IE=0mA,f=1MHz | ||
| Power Gain | | S21e |² | 12 | dB | VCE=6V,IC=20mA,f=0.9GHz | ||
| Noise Figure | NF | 1.6 | dB | VCE=6V,IC=5mA,f=0.9GHz | ||
| Collector Current | IC | 70 | mA | |||
| Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Collector-Emitter Breakdown Voltage | VCEO | 12 | V | |||
| Emitter-Base Breakdown Voltage | VEBO | 2.5 | V |
Pin Definition
1: Base, 2: Emitter, 3: Collector
S-Parameter Data
| Frequency (GHz) | S11 MAG | S11 ANG | S21 MAG | S21 ANG | S12 MAG | S12 ANG | S22 MAG | S22 ANG |
| 0.1 | -6.6832 | -75.942 | 27.587 | 106.52 | -34.626 | 46.456 | -0.3502 | -58.822 |
| 0.2 | -8.106 | -122.1 | 23.976 | 109.64 | -29.938 | 61.289 | -4.5171 | -62.832 |
| 0.3 | -8.8634 | -148.15 | 21.374 | 102.67 | -27.238 | 61.582 | -6.5068 | -63.78 |
| 0.4 | -9.0018 | -164.81 | 19.537 | 95.367 | -25.771 | 61.377 | -7.5613 | -67.078 |
| 0.5 | -9.2195 | -178.95 | 17.973 | 90.93 | -24.219 | 63.495 | -8.3639 | -70.665 |
| 0.6 | -8.9875 | 167.51 | 16.174 | 85.379 | -23.334 | 63.438 | -8.9221 | -77.929 |
| 0.7 | -9.1156 | 158.93 | 15.292 | 81.803 | -22.067 | 63.982 | -9.1529 | -80.92 |
| 0.8 | -9.4357 | 147.51 | 14.187 | 76.701 | -21.666 | 65.759 | -9.3461 | -88.687 |
| 0.9 | -9.0235 | 137.54 | 12.837 | 73.29 | -20.344 | 65.988 | -9.5025 | -95.79 |
| 1 | -9.227 | 128.85 | 12.539 | 70.694 | -19.609 | 66.434 | -9.5448 | -100.81 |
| 1.1 | -9.6157 | 119.89 | 11.296 | 65.422 | -19.49 | 70.351 | -9.3952 | -108.69 |
| 1.2 | -9.339 | 111.27 | 10.203 | 63.235 | -17.819 | 70.987 | -9.5371 | -117.01 |
| 1.3 | -9.5573 | 101.97 | 10.051 | 62.093 | -17.237 | 69.649 | -9.1137 | -124.08 |
| 1.4 | -9.7465 | 93.767 | 8.7776 | 55.039 | -17.119 | 69.022 | -9.1546 | -130.28 |
| 1.5 | -9.6668 | 87.301 | 7.6636 | 56.394 | -15.643 | 74.923 | -9.1062 | -137.6 |
| 1.6 | -9.5077 | 76.181 | 8.014 | 56.537 | -14.757 | 67.022 | -8.6152 | -146.77 |
| 1.7 | -9.9487 | 71.561 | 6.3593 | 47.455 | -14.927 | 68.696 | -8.8371 | -150.92 |
| 1.8 | -9.8743 | 61.243 | 5.7907 | 54.124 | -13.923 | 72.592 | -8.1651 | -154.64 |
| 1.9 | -9.4727 | 50.258 | 6.0825 | 52.986 | -12.602 | 61.886 | -7.3306 | -169 |
| 2 | -10.258 | 47.821 | 4.7064 | 46.549 | -13.192 | 62.409 | -7.1995 | -172.93 |
| 2.1 | -9.7414 | 36.372 | 4.8961 | 55.076 | -12.064 | 61.256 | -6.4942 | 179.84 |
2410121235_GUOXIN-JIAPIN-SEMICONDUCTOR-FCR520B_C2992558.pdf
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