N Channel MOSFET Trenched Technology RoHS Compliant HUASHUO HSBA8048 for Fast Switching Applications
Key Attributes
Model Number:
HSBA8048
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
48A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
38pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
2.86nF@40V
Pd - Power Dissipation:
56W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
HSBA8048
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA8048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous rectification. This device meets RoHS and Halogen-Free compliance and is 100% EAS guaranteed with full function reliability approval. Its advanced high cell density Trench technology ensures super low gate charge and excellent CdV/dt effect decline.Product Attributes
- Brand: HS-Semi
- Model: HSBA8048
- Technology: N-Ch MOSFET, Trench
- Compliance: RoHS, Halogen-Free
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
- Device Type: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 80 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 48 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 42.5 | A | |||
| IDM | Pulsed Drain Current2 | 170 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 57.8 | mJ | |||
| IAS | Avalanche Current | 34 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 56 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.2 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 80 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 4.3 | 6.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A | 6.3 | 8.5 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=64V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=64V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 75 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 0.5 | --- | ||
| Qg | Total Gate Charge (10V) | VDS=40V , VGS=10V , ID=20A | 40 | --- | nC | |
| Qgs | Gate-Source Charge | 7.2 | --- | |||
| Qgd | Gate-Drain Charge | 6.5 | --- | |||
| td(on) | Turn-On Delay Time | VDD=40V , VGS=10V , RG=3, ID=20A | 8.3 | --- | ns | |
| tr | Rise Time | 4.2 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 36 | --- | ns | ||
| tf | Fall Time | 6.9 | --- | ns | ||
| Ciss | Input Capacitance | VDS=40V , VGS=0V , f=1MHz | 2860 | --- | pF | |
| Coss | Output Capacitance | 410 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 38 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 48 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=A , TJ=25 | 0.77 | 1.0 | V | |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/s , TJ=25 | 27 | --- | nS | |
| Qrr | Reverse Recovery Charge | 89 | --- | nC | ||
2409291134_HUASHUO-HSBA8048_C508833.pdf
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