Power MOSFET TO220F Package 650V 7A N Channel Enhancement Mode Hangzhou Silan Microelectronics SVF7N65F
Key Attributes
Model Number:
SVF7N65F
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
98pF
Input Capacitance(Ciss):
789pF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
SVF7N65F
Package:
TO-220F-3
Product Description
Product Overview
The SVF7N65T/F/S is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | VDS (V) | ID (A) @TC=25C | RDS(on)(typ.) () @VGS=10V | PD (W) @TC=25C | EAS (mJ) | RJC (C/W) | RJA (C/W) | Ordering Information |
| SVF7N65T | TO-220-3L | 650 | 7.0 | 1.1 | 145 | 435 | 0.86 | 62.5 | SVF7N65T, Pb free, Tube |
| SVF7N65F | TO-220F-3L | 650 | 7.0 | 1.1 | 46 | 435 | 2.7 | 62.5 | SVF7N65F, Pb free, Tube |
| SVF7N65S | TO-263-2L | 650 | 7.0 | 1.1 | 120 | 435 | 1.04 | 62.5 | SVF7N65S, Halogen free, Tube |
| SVF7N65STR | TO-263-2L | 650 | 7.0 | 1.1 | 120 | 435 | 1.04 | 62.5 | SVF7N65S, Halogen free, Tape & Reel |
2501091111_Hangzhou-Silan-Microelectronics-SVF7N65F_C467752.pdf
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