High current P channel MOSFET HUASHUO HSM24P03 with 30V drain source voltage and fast switching speed
Key Attributes
Model Number:
HSM24P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
410pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
6.24nF@25V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
HSM24P03
Package:
SOP-8
Product Description
Product Overview
The HSM24P03 is a P-channel, 30V fast switching MOSFET designed for high-performance synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and is approved for full function reliability. It provides excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM24P03 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TC=25) | VGS @ -10V1 | -24 | A | |||
| Pulsed Drain Current (IDM)2 | -96 | A | ||||
| Total Power Dissipation (PD@TA=25)4 | 2.1 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-10V , ID=-17A | 3.8 | 4.8 | m | ||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-4.5V , ID=-10A | 5.8 | 7.8 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.2 | -1.6 | -2.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | |||
| Total Gate Charge (Qg)(-10V) | VDS=-15V , VGS=-10V , ID=-10A | 110 | nC | |||
| Input Capacitance (Ciss) | VDS=-25V , VGS=0V , f=1MHz | 6240 | pF | |||
| Output Capacitance (Coss) | 780 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 410 | pF | ||||
| Continuous Source Current (IS)1,5 | VG=VD=0V , Force Current | -24 | A | |||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=-1A , TJ=25 | -1 | V |
Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width 300s, duty cycle 2%.
3 Power dissipation is limited by 150 junction temperature.
4 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2409291004_HUASHUO-HSM24P03_C2828488.pdf
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