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quality Fast Switching N Channel MOSFET HUASHUO HSU0048 with RoHS Compliance and Low Gate Charge Performance factory
quality Fast Switching N Channel MOSFET HUASHUO HSU0048 with RoHS Compliance and Low Gate Charge Performance factory

Fast Switching N Channel MOSFET HUASHUO HSU0048 with RoHS Compliance and Low Gate Charge Performance

Key Attributes
Model Number: HSU0048
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
73A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V,13.5A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
20pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
3.32nF@50V
Pd - Power Dissipation:
108W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
HSU0048
Package:
TO-252
Product Description

Product Overview

The HSU0048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous rectification in AC/DC quick chargers. This MOSFET is 100% EAS guaranteed and complies with RoHS and Halogen-Free standards.

Product Attributes

  • Brand: HS-Semi
  • Model: HSU0048
  • Type: N-Channel Fast Switching MOSFET
  • Compliance: RoHS and Halogen-Free
  • Guarantee: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current (1) 73 A
ID@TC=70 Continuous Drain Current (1) 46 A
IDM Pulsed Drain Current (2) 290 A
EAS Single Pulse Avalanche Energy (3) 61 mJ
IAS Avalanche Current 35 A
PD@TC=25 Total Power Dissipation (4) 108 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-Ambient (1)(t10s) 25 /W
RJA Thermal Resistance Junction-Ambient (1) 55 /W
RJC Thermal Resistance Junction-Case (1) 1.15 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 V
RDS(ON),TYP Static Drain-Source On-Resistance VGS=10V , ID=13.5A 6.6 8.5 m
RDS(ON),TYP Static Drain-Source On-Resistance VGS=4.5V , ID=11.5A 8.7 11 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 2.3 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=5V , ID=20A 85 S
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=13.5A 45 nC
Qg Total Gate Charge (4.5V) 19.3 nC
Qgs Gate-Source Charge 9.5 nC
Qgd Gate-Drain Charge 4.8 nC
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3, ID=13.5A 10 ns
Tr Rise Time 6.5 ns
Td(off) Turn-Off Delay Time 45 ns
Tf Fall Time 7.5 ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 3320 pF
Coss Output Capacitance 605 pF
Crss Reverse Transfer Capacitance 20 pF
IS Continuous Source Current (1,5) VG=VD=0V , Force Current 48 A
VSD Diode Forward Voltage (2) VGS=0V , IS=1A , TJ=25 1.1 V
trr Reverse Recovery Time IF=13.5A , di/dt=100A/s , TJ=25 33 nS
Qrr Reverse Recovery Charge 150 nC

Notes:
(1) The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
(2) The data tested by pulsed, pulse width 300s, duty cycle 2%.
(3) The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.3mH, IAS=35A.
(4) The power dissipation is limited by 150 junction temperature.
(5) The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410121621_HUASHUO-HSU0048_C701010.pdf

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