P channel MOSFET HUASHUO HSU3119 featuring fast switching and operation for power management systems
Key Attributes
Model Number:
HSU3119
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.21nF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
12.7nF@15V
Pd - Power Dissipation:
135W
Gate Charge(Qg):
210nC@10V
Mfr. Part #:
HSU3119
Package:
TO-252-2L
Product Description
Product Overview
The HSU3119 is a P-channel MOSFET featuring high cell density trench technology, designed for excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device offers fast switching capabilities and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Line: P-Ch 30V Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 20 | 20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -130 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -81 | A | |||
| IDM | Pulsed Drain Current2 | -510 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1050 | mJ | |||
| IAS | Avalanche Current | -75 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 135 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(t10S) | 20 | /W | |||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | 60 | /W | |||
| RJC | Thermal Resistance Junction-case 1 | 1.8 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 3.0 | m | ||
| VGS=-4.5V , ID=-20A | 4.2 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | ||
| VDS=-30V , VGS=0V , TJ=125 | -100 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate resistance | VDS=0V , VGS=0V , f=1MHz | 1.8 | |||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-20A | 210 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | nC | |||
| Qgd | Gate-Drain Charge | 3.3 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3, ID=-10A | 17 | ns | ||
| tr | Rise Time | 6 | ns | |||
| td(off) | Turn-Off Delay Time | 21 | ns | |||
| tf | Fall Time | 39 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 12700 | pF | ||
| Coss | Output Capacitance | 1380 | pF | |||
| Crss | Reverse Transfer Capacitance | 1210 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -130 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 37 | nS | ||
| Qrr | Reverse Recovery Charge | 30 | nC | |||
2410122017_HUASHUO-HSU3119_C28314522.pdf
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